Diodes FZT558 User Manual

FZT558

A Product Line of

Diodes Incorporated

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

Device Symbol

Green

C

FZT

558

400V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223

Features

• BV

• IC = -200mA high Continuous Current

• Low saturation voltage V

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

CEO

> -400V

CE(sat)

SOT223

Top View

< -200mV @ -20mA

Mechanical Data

• Case: SOT223

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

B

E

Top View

Pin-Out

Ordering Information

FZT558TA FZT558 7 12 1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com

(Notes 4)

Marking Information

FZT558 = Product Type Marking Code

FZT558

Document number: DS33139 Rev.3 - 2

1 of 6

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November 2012

© Diodes Incorporated

FZT558

A Product Line of

Diodes Incorporated

Characteristic

Symbol

Value

Unit

CBO

CEO

EBO

Characteristic

Symbol

Value

Unit

(Note 5

)

2 W

(Note 6

) 3 W

θJL

J, TSTG

Maximum Ratings

(@TA = +25°C, unless otherwise specified.)

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current

Thermal Characteristics

Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 7)

Operating and Storage Temperature Range

Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when

6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

operating in steady state condition.

(@TA = +25°C, unless otherwise specified.)

(Note 5)
(Note 6) 41.7

Thermal Characteristics and Derating Information

70
60
50
40
30
20
10

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

25mm x 25mm

D=0.5

D=0.2

0

T

=25°C

amb

2oz FR4

Pulse Width (s)

Single Pulse

D=0.05

D=0.1

Transient Thermal Impedance

V
V
V

IC

PD

R

θJA

R

T

50

T

=25°C

40

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

Pulse Width (s)

Transient Thermal Impedance

-400 V

-400 V

-7 V

-200 mA

62.5

19.41

-55 to +150

Single Pulse

D=0.05

D=0.1

°C/W
°C/W
°C/W

°C

FZT558

Document number: DS33139 Rev.3 - 2

Single Pulse

T

100

10

25mm x 25mm

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

2oz FR4

Pulse Width (s)

=25°C

amb

50mm x 50mm

2oz FR4

Pulse Power Dissipation

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3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

Derating Curve

November 2012

© Diodes Incorporated