Diodes FZT549 User Manual
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 1995 ✪
FZT549
PARTMARKING DETAIL FZT549
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
j:Tstg
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current h
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
-35 V
-30 V IC=-10mA*
-5 V
-0.1
-10
-0.1
-0.50
-0.75VV
-1.25 V IC=-1A, IB=-100mA*
-1.0 V IC =-1A, VCE =-2V*
70
100
300
80
30
Transition Frequency f
Output Capacitance C
T
obo
*Measured under pulsed conditions. Pulse width=300
100 MHz IC=-100mA, VCE=-5V,
10 pF VCB=-10V, f=1MHz
µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet.
-35 V
-30 V
-5 V
-2 A
-1 A
2W
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
V
µA
µA
µA
CB
V
CB
V
EB
=-30V
=-30V, T
=-4V
amb
IC=-1A, IB =-100mA*
I
=-2A, IB -200mA*
C
I
=-50mA, VCE =-2V
C
I
=-500mA, VCE =-2V*
C
=-1A, VCE =-2V*
I
C
I
=-2A, VCE =-2V*
C
f =100MHz
E
C
=100°C
3 - 191
Loading...