Diodes FZT493 User Manual

SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 3  NOVEMBER 1995 ✪

FZT493

C

COMPLEMENTARY TYPE  FZT593

PARTMARKING DETAIL  FZT493

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

CBO

CEO

EBO

CM

C

B

tot

j:Tstg

amb

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltages V

Cut-Off Currents I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current h

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

FE

120 V

100 V IC=10mA*

5V

100 nA VCB=100V

100 nA VEB=4V

100 nA V

0.3

0.6

1.15 V IC=1A, IB=100mA*

1.0 V IC =1A, VCE =10V*

100
100

300
80
30

Transition Frequency f

Output Capacitance C

*Measured under pulsed conditions. Pulse width=300
For typical Characteristics graphs see FMMT493 datasheet

T

obo

150 MHz IC=50mA, VCE=10V,

10 pF VCB=10V, f=1MHz

µs. Duty cycle ≤2%

120 V

100 V

5V

2A

1A

200 mA

2W

-55 to +150 °C

=100µA

I

C

=100µA

I

E

=100V

CES

V
V

IC=500mA, IB =50mA*
I

=1A, IB =100mA*

C

I

=1mA, VCE =10V

C

=250mA, VCE =10V*

I

C

=500mA, VCE =10V*

I

C

I

= 1A, VCE =10V*

C

f =100MHz

E

C

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