Diodes FZT491A User Manual

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f

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NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223

Features

• BV

• Max Continuous Current I

• Low saturation voltage V

• Complementary PNP Type: FZT591A

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

CEO

> 40V

= 1A

C

< 500mV @ 1A

CE(sat)

Applications

• Power MOSFET gate driving

• Low loss power switching

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Green

FZT491A

Mechanical Data

• Case: SOT223

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

SOT223

Top View

B

Device S

C

E

mbol

Top View

Pin-Out

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

FZT491ATA AEC-Q101 FZT491A 7 12 1,000

FZT491AQTA Automotive FZT491A 7 12 1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com

Marking Information

FZT

491A

FZT491A = Product Type Marking Code

FZT491A

Document number: DS33136 Rev. 3 - 2

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Maximum Ratings (@T

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8)

Operating and Storage Temperature Range

ESD Ratings (Note 9)

FZT491A

V

CBO

V

CEO

V

EBO

I

C

I

B

I

CM

(Note 6)
(Note 7) 3 W
(Note 6)
(Note 7) 41.7

P

R
R

T

J, TSTG

θJA

θJL

D

40 V
40 V

7 V
1 A

200 mA

2 A

2 W

62.5

19.41

-55 to +150

°C/W
°C/W
°C/W

°C

Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when

operating in steady state condition.

7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Characteristic Symbol Value Unit JEDEC Class

FZT491A

Document number: DS33136 Rev. 3 - 2

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Thermal Characteristics and Derating Information

70

T

=25°C

60
50
40
30
20
10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

amb

25mm x 25mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

FZT491A

50

T

=25°C

40

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/ W)

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

Single Pulse

T

100

10

25mm x 25mm

2oz FR4

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s )

=25°C

amb

50mm x 50mm

2oz FR4

Pulse Power Dissipation

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

Derating Curve

FZT491A

Document number: DS33136 Rev. 3 - 2

3 of 7

www.diodes.com

October 2012

© Diodes Incorporated