Diodes FZT489 User Manual

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Green

30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223

Features

• BV

• Max Continuous Current I

• Low Saturation Voltage

• Complementary PNP Type: FZT589

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP capable (Note 4)

CEO

> 30V

SOT223

Top View

C

= 1A

B

Device S

Mechanical Data

• Case: SOT223

• Case material: molded plastic. “Green” molding compound.

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

• Weight: 0.112 grams (approximate)

C

E

mbol

Diodes Incorporated

FZT489

Top View

Pin-Out

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

FZT489TA AEC-Q101 FZT489 7 12 1,000

FZT489QTA Automotive FZT489 7 12 1,000

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com

Marking Information

FZT489

Document Number DS33134 Rev. 4 - 2

FZT
489

www.diodes.com

FZT489 = Product Type Marking Code

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FZT489

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current

V

CBO

V

CEO

V

EBO

I

C

I

B

I

CM

50 V
30 V

7 V
1 A

200 mA

4 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8)

Operating and Storage Temperature Range

(Note 6)
(Note 7) 3 W
(Note 6)
(Note 7) 41.7

P

R
R

T

J, TSTG

θJA

θJL

D

2 W

62.5

°C/W
°C/W

19.41

-55 to +150

°C/W

°C

ESD Ratings (Note 9)

Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C

Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when

operating in steady state condition.

7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Characteristic Symbol Value Unit JEDEC Class

FZT489

Document Number DS33134 Rev. 4 - 2

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Thermal Characteristics and Derating Characteristics

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Diodes Incorporated

FZT489

70

T

=25°C

60
50
40
30
20
10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

amb

25mm x 25mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

Single Pulse

T

100

10

=25°C

amb

50mm x 50mm

2oz FR4

50

T

=25°C

40

30

20

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/ W)

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

3.0

2.5

2.0

1.5

1.0

50mm x 50mm

2oz FR4

25mm x 25mm

2oz FR4

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Power Dissipation

FZT489

Document Number DS33134 Rev. 4 - 2

25mm x 25mm

2oz FR4

Pulse Width (s )

Max Power Dissipation (W)

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0.5

0.0

0 20 40 60 80 100 120 140 160

Temperature (°C)

Derating Curve

© Diodes Incorporated

October 2012