Diodes FZT458 User Manual

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Product Line o
Green
400V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223
Features
BV
Max Continuous Current I
Low Saturation Voltage
Complementary PNP Type: FZT558
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
CEO
> 400V
SOT223
Top View
= 300mA
C
B
Device S
Mechanical Data
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
C
E
mbol
Diodes Incorporated
FZT458
Top View
Pin-Out
Ordering Information (Note 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT458TA AEC-Q101 FZT458 7 12 1,000
FZT458QTA Automotive FZT458 7 12 1,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
FZT458
Document Number DS33133 Rev. 5 - 2
FZT
458
www.diodes.com
FZT458 = Product Type Marking Code
1 of 7
October 2012
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FZT458
Maximum Ratings (@T
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Peak Pulse Current
Thermal Characteristics (@T
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8) Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
V
CBO
V
CEO
V
EBO
I
C
I
B
I
CM
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
(Note 6) (Note 7) 3 W (Note 6) (Note 7) 41.7
P
R
R
T
J, TSTG
θJA
θJL
D
400 V 400 V
7 V 300 mA 200 mA
1 A
2 W
62.5
19.41
-55 to +150
°C/W °C/W °C/W
°C
ESD Ratings (Note 9)
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
FZT458
Document Number DS33133 Rev. 5 - 2
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www.diodes.com
October 2012
© Diodes Incorporated
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Thermal Characteristics and Derating Characteristics
1
100m
10m
Collector Current (A)
C
I
DC
1s
100ms
10ms
1ms
100µs
Single Pulse T
1m
110100
amb
=25°C
VCE Collector-Emitter Voltage (V)
Safe Operating Area
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Diodes Incorporated
FZT458
70
T
=25°C
60
50
40
amb
25mm x 25mm
2oz FR4
D=0.5
30
20
D=0.2
Single Pulse
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T
=25°C
100
10
amb
50mm x 50mm
2oz FR4
50
T
=25°C
40
amb
50mm x 50mm
2oz FR4
30
D=0.5
20
D=0.2
10
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
3.0
2.5
2.0
1.5
1.0
50mm x 50mm
2oz FR4
25mm x 25mm
2oz FR4
25mm x 25mm
2oz FR4
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
Pulse Power Dissipation
FZT458
Document Number DS33133 Rev. 5 - 2
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0.5
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
October 2012
© Diodes Incorporated
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