Page 1
PNP SILICON PLANAR MEDIUM POWER
C
B
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FZT1151A
FEATURES
*V
CEO
= -40V
C
* 3 Amp Continuous Current
* 5 Amp Pulse Current
* Low saturation Voltage
* High Gain
C
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
† The power which can be dissipated assuming the device is mounted in a typical manner on
a P.C.B. with copper equal to 2 inches x 2 inches
=25°C † P
amb
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-45 V
-40 V
-5 V
-5 A
-3 A
-500 mA
2.5 W
-55 to +150 °C
E
Page 2
FZT1151A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
MIN. TYP. MAX.
-45 -95 V
-40 -90 V
-40 -85 V IC=-10mA *
-40 -90 V
-5 -8.5 V
270
250
180
100
= 25°C).
amb
VALUE
UNIT CONDITIONS.
-0.3 -100 nA VCB=-36V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA VCE=-32V
-60
-120
-140
-170
-200
-90
-180
-220
-260
-300
mV
mV
mV
mV
mV
-985 -1100 mV IC=-3A, IB=-250mA*
-850 -1000 mV IC=-3A, VCE=-2V*
450
400
800
300
190
45
Transition Frequency f
Output Capacitance C
Switching Times t
T
cb
on
t
off
145 MHz IC=-50mA, VCE=-10V
40 pF VCB=-10V, f=1MHz
170 ns IC=-2A, IB=-20mA,
460 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
=-100µA
I
C
I
=-100µA
C
I
=-100µA, VEB=+1V
C
I
=-100µA
E
IC=-0.1A, IB=-1.0mA*
I
=-0.5A, IB=-5mA*
C
I
=-1A, IB=-20mA*
C
I
=-1.8A, IB=-70mA*
C
I
=-3A, IB=-250mA*
C
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-3A, VCE=-2V*
C
I
=-5A, VCE=-2V*
C
f=50MHz
V
=-30V
CC
I
=-2A, IB=±20mA,
C
V
=-30V
CC
Page 3
TYPICAL CHARACTERISTICS
FZT1151A
1.0
+25°C
0.8
0.6
- (V)
0.4
CE(sat)
V
0.2
0
1m 10
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
10m 100m 1
IC - Collector Current (A)
VCE(sat) v IC
750
500
250
- Typical Gain
FE
h
0
1m 100m 10
+100°C
+25°C
-55°C
10m
IC- Collector Current (A)
hFE v IC
1.2
VCE=2V
1.0
IC/IB=100
0.8
0.6
0.4
-55°C
+25°C
+100°C
VCE(sat) - (V)
0.2
0
1m 10
10m 100m 1
IC - Collector Current (A)
VCE(sat) v IC
VBE(sat) - (V)
1.4
IC/IB=100
1.2
1.0
0.8
0.6
0.4
0.2
0
10m 1
IC- Collector Current (A)
-55°C
+25°C
+100°C
10100m1m
VCE=2V
1
VBE(sat) v IC
10
0.9
- (V)
0.6
BE(on)
V
0.3
0
10m 1
1m 100m 10
IC- Collector Current (A)
V
v I
BE(on)
C
-55°C
+25°C
+100°C
1
DC
1s
100ms
10ms
1ms
100us
100m 100
VCE- Collector Emitter Voltage (V)
110
IC - Collector Current (A)
100m
10m
Safe Operating Area
Page 4
FZT1151A
THERMAL CHARACTERISTICS
Max Power Dissipation - (Watts)
4
3
2
1
0
0
20 40 60 80 100 120 140 160
T - Ambient Temperature (°C)
Derating curve
D = 1
Thermal Resistance (°C/W)
50
40
30
20
10
0
100µs
D=t1
t1
tP
tP
1ms 10ms 100ms 1s 10s 100s
Pulse Width
Transient Thermal Resistance
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
SPICE PARAMETERS
*ZETEX FZT1151A Spice model Last revision 12/12/96
*
.MODEL FZT1151A PNP IS =1.7e-12 NF =1.004 ISE=1.02e-13
+ NE =1.55 BF =562 VAF=26.01 IKF=3.5 NR =.97
+ ISC= 1.5e-13 NC =1.3 BR =38 VAR=2.41 IKR=0.3
+ RE =25.37e-3 RB =250e-3 RC =25e-3 CJE=440e-12
+ CJC=160e-12 VJC=1.058 MJC= 0.5678 TF =0.8e-9 TR =55.5e-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given
and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
Loading...