Diodes FZT1151A User Manual
PNP SILICON PLANAR MEDIUM POWER
C
B
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FZT1151A
FEATURES
*V
CEO
= -40V
C
* 3 Amp Continuous Current
* 5 Amp Pulse Current
* Low saturation Voltage
* High Gain
C
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
† The power which can be dissipated assuming the device is mounted in a typical manner on
a P.C.B. with copper equal to 2 inches x 2 inches
=25°C † P
amb
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-45 V
-40 V
-5 V
-5 A
-3 A
-500 mA
2.5 W
-55 to +150 °C
E
FZT1151A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
MIN. TYP. MAX.
-45 -95 V
-40 -90 V
-40 -85 V IC=-10mA *
-40 -90 V
-5 -8.5 V
270
250
180
100
= 25°C).
amb
VALUE
UNIT CONDITIONS.
-0.3 -100 nA VCB=-36V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA VCE=-32V
-60
-120
-140
-170
-200
-90
-180
-220
-260
-300
mV
mV
mV
mV
mV
-985 -1100 mV IC=-3A, IB=-250mA*
-850 -1000 mV IC=-3A, VCE=-2V*
450
400
800
300
190
45
Transition Frequency f
Output Capacitance C
Switching Times t
T
cb
on
t
off
145 MHz IC=-50mA, VCE=-10V
40 pF VCB=-10V, f=1MHz
170 ns IC=-2A, IB=-20mA,
460 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
=-100µA
I
C
I
=-100µA
C
I
=-100µA, VEB=+1V
C
I
=-100µA
E
IC=-0.1A, IB=-1.0mA*
I
=-0.5A, IB=-5mA*
C
I
=-1A, IB=-20mA*
C
I
=-1.8A, IB=-70mA*
C
I
=-3A, IB=-250mA*
C
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-3A, VCE=-2V*
C
I
=-5A, VCE=-2V*
C
f=50MHz
V
=-30V
CC
I
=-2A, IB=±20mA,
C
V
=-30V
CC
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