Diodes FZT1149A User Manual
PNP SILICON PLANAR MEDIUM POWER
B
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FZT1149A
FEATURES
*V
CEO
= -25V
C
* 4 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
† The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches x 2 inches
=25°C † P
amb
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-30 V
-25 V
-5 V
-10 A
-4 A
-500 mA
2.5 W
-55 to +150 °C
SOT223
C
E
FZT1149A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
MIN. TYP. MAX.
-30 -70 V
-25 -60 V
-25 -60 V IC=-10mA *
-25 -60 V
-5 -8.5 V
270
250
195
115
= 25°C ).
amb
VALUE
UNIT CONDITIONS.
-0.3 -100 nA VCB=-24V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA VCE=-20V
-45
-100
-140
-170
-230
-80
-170
-240
-260
-350
mV
mV
mV
mV
mV
-960 -1050 mV IC=-4A, IB=-140mA*
-860 -1000 mV IC=-4A, VCE=-2V*
450
400
800
320
190
50
Transition Frequency f
Output Capacitance C
Switching Times
T
cb
t
on
t
off
135 MHz IC=-50mA, VCE=-10V
50 pF VCB=- 10V, f= 1MHz
150 ns IC=-4A, IB=-40mA,
270 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
I
=-100µA
C
=-100µA
I
C
I
=-100µA, VEB=+1V
C
I
=-100µA
E
IC=-0.1A, IB=-1.0mA*
I
=-0.5A, IB=-3mA*
C
I
=-1A, IB=-7mA*
C
I
=-2A, IB=-30mA*
C
I
=-4A, IB=-140mA*
C
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-5A, VCE=-2V*
C
I
=-10A, VCE=-2V*
C
f=50MHz
V
=-10V
CC
I
=-4A, IB=±40mA,
C
V
=-10V
CC
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