Diodes FZT1147A User Manual
PNP SILICON PLANAR MEDIUM POWER
C
B
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
*V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
CEO
= -12V
FZT1147A
E
C
ABSOLUTE MAXIMUM RATINGS.
SOT223
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
†The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches by 2 inches
=25°C † P
amb
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-15 V
-12 V
-5 V
-20 A
-5 A
-500 mA
2.5 W
-55 to +150 °C
FZT1147A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
cb
on
t
off
MIN. TYP. MAX.
-15 -35 V
-12 -25 V
-12 -25 V IC=-10mA *
-12 -25 V
-5 -8.5 V
270
250
200
150
90
= 25°C).
amb
VALUE
UNIT CONDITIONS.
-0.3 -100 nA VCB=-12V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA VCE=-10V
-25
-70
-90
-115
-250
-50
-110
-130
-170
-400
mV
mV
mV
mV
mV
-950 -1050 mV IC=-5A, IB=-50mA*
-905 -1000 mV IC=-5A, VCE=-2V*
450
400
850
340
245
145
50
115 MHz IC=-50mA, VCE=-10V
80 pF VCB=-10V, f=1MHz
150 ns IC=-4A, IB=-40mA,
220 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.
I
=-100µA
C
=-100µA
I
C
I
=-100µA, VEB=+1V
C
I
=-100µA
E
IC=-0.1A, IB=-1.0mA*
I
=-0.5A, IB=-2.5mA*
C
I
=-1A, IB=-6mA*
C
I
=-2A, IB=-20mA*
C
I
=-5A, IB=-50mA*
C
I
=-10mA, VCE=-2V*
C
I
=-0.5A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-5A, VCE=-2V*
C
I
=-10A, VCE=-2V*
C
I
=-20A, VCE=-2V*
C
f=50MHz
V
=-10V
CC
=-4A, IB=±40mA,
I
C
V
=-10V
CC
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