Diodes FZT1053A User Manual
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f
Product Line o
Diodes Incorporated
FZT1053A
75V NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT-223
Features and Benefits
• BV
• Maximum continuous current I
• 10A pulse current
• High gain holds up h
• Very low equivalent on-resistance; R
• “Green” component, Lead Free Finish / RoHS compliant
• Qualified to AEC-Q101 Standards for High Reliability
CEO
(Note 1)
> 75V
> 300 @ IC=1A
FE
SOT223
Top View
= 4.5A
C
= 78mΩ at 4.5A
CE(sat)
Mechanical Data
• Case: SOT223
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
Equivalent Circuit Top View
Pin Out
Ordering Information (Note 1)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT1053ATA FZT1053A 7 12 1,000
Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds. All applicable RoHS
exemptions applied. Further information about Diodes Inc.’s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
FZT1053A
Document number: DS33185 Rev. 3 - 2
FZT
1053A
FZT1053A = Product Type Marking Code
1 of 5
www.diodes.com
September 2011
© Diodes Incorporated
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Maximum Ratings @T
= 25°C unless otherwise specified
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Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Peak Pulse Current (Note 2)
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Leads (Note 3)
Operating and Storage Temperature Range
V
V
V
I
R
R
T
J,TSTG
CBO
CEO
EBO
I
C
I
B
CM
P
D
θJA
θJL
Product Line o
Diodes Incorporated
FZT1053A
150 V
75 V
7.5 V
4.5 A
500 mA
10 A
2.5 W
50
10.88
-55 to +150
°C/W
°C/W
°C
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC current transfer Static ratio (Note 4)
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Turn-on Voltage (Note 4)
Transitional Frequency (Note 4)
Output capacitance
Switching Time
Notes: 2. For the device mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
3. Thermal resistance from junction to solder-point (at the end of the drain lead)
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
BV
BV
BV
BV
BV
I
I
I
V
CE(sat)
V
BE(sat
V
BE(on
C
CBO
CES
CEO
CEV
EBO
CBO
CES
EBO
h
FE
f
T
obo
t
on
t
off
150 250 - V
150 250 - V
75 100 - V
150 250 - V
7.5 8.8 - V
- 0.9 10 nA
- 1.5 10 nA
- 0.3 10 nA
270 440 300 450 1200
300 450 -
-
40 60 -
- 20 -
-
-
-
-
-
21 30
55 75
150 200
160 210
350 440
mV
- 900 1000 mV
- 825 950 mV
- 140 - MHz
- 21 30 pF
- 162 - ns
- 900 - ns
IC = 100µA
IC = 100µA
IC = 10mA
IC = 100µA, VEB = 1V
IE = 100µA
V
= 120V
CB
= 120V
V
CES
V
= 4V
EB
I
= 10mA, V
C
= 0.5A, V
I
C
= 1A, VCE = 2V
I
C
= 4.5A, V
I
C
= 10A, V
I
C
= 0.2A, IB = 20mA
I
C
= 0.5A, IB = 20mA
I
C
= 1A, IB = 10mA
I
C
= 2A, IB = 100mA
I
C
= 4.5A, IB = 200mA
I
C
CE
CE
CE
CE
= 2V
= 2V
= 2V
= 2V
IC = 3A, IB = 100mA
IC = 3A, VCE = 2V
= 50mA, VCE = 10V,
I
C
f = 100MHz
= 10V, f = 1MHz,
V
CB
V
= 50V, I
CC
= IB2 = ±20mA
I
B1
= 2A,
C
FZT1053A
Document number: DS33185 Rev. 3 - 2
2 of 5
www.diodes.com
September 2011
© Diodes Incorporated
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