SOT 223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - JUNE 2007
FZT1049A
FEATURES
CEO
= 25V
*V
C
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
= 50mΩ at 5A
CE(sat)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
Base Voltage V
=25°C † P
amb
CBO
CEO 25
EBO
CM
C
B
tot
T
j:Tstg
80 V
V
5V
20 A
5 A
500 mA
2.5 W
-55 to +150 °C
E
C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
FZT1049A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
80 130 V
80 130 V
I
=100µA
C
I
=100µA *
C
25 30 V IC=10mA
80 130 V
59 V
I
=100µA, VEB=1V
C
I
=100µA
E
0.3 10 nA VCB=35V
0.3 10 nA VEB=4V
0.3 10 nA V
35
70
180
250
60
100
250
330
mV
mV
mV
mV
=35V
CES
I
=0.5A, IB=10mA*
C
I
=1A, IB=10mA*
C
I
=3A, IB=30mA*
C
I
=5A, IB=50mA*
C
950 1050 mV IC=5A, IB=50mA*
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Turn-on Time t
Turn-off Time t
V
h
T
on
off
BE(on)
FE
obo
280
300
300
180
40
900 1000 mV IC=5A, VCE=2V*
440
450
450
1200
280
80
180 MHz IC=50mA, VCE=10V
45 60 pF VCB=10V, f=1MHz
125 ns IC=4A, IB=40mA, VCC=10V
380 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
I
=10mA, VCE=2V*
C
I
=0.5A, VCE=2V*
C
I
=1A, VCE=2V*
C
I
=5A, VCE=2V*
C
I
=20A, VCE=2V*
C
f=100MHz