Page 1
SOT223
NPN SILICON PLANAR MEDIUM POWER
B
HIGH GAIN TRANSISTOR
ISSUE 1- FEBRUARY 1997
FZT1048A
FEATURES
*V
CEO
= 17.5V
C
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
= 50mΩ at 5A
CE(sat)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
=25°C † P
amb
CBO
CEO
EBO
CM
C
B
tot
T
j:Tstg
50 V
17.5 V
5V
20 A
5 A
500 mA
2.5 W
-55 to +150 °C
E
C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
Page 2
FZT1048A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
MIN. TYP. MAX.
50 85 V
50 85 V
17.5 24 V IC=10mA
50 85 V
58.7 V
280
300
300
180
50
= 25°C unless otherwise stated).
amb
VALUE
UNIT CONDITIONS.
=100µA
I
C
=100µA*
I
C
=100µA, VEB=1V
I
C
=100µA
I
E
0.3 10 nA VCB=35V
0.3 10 nA VEB=4V
0.3 10 nA VCE=35V
27
55
155
250
45
75
210
350
mV
mV
mV
mV
=0.5A, IB=10mA*
I
C
=1A, IB=10mA*
I
C
=3A, IB=15mA*
I
C
=5A, IB=25mA*
I
C
920 1000 mV IC=5A, IB=25mA*
880 970 mV IC=5A, VCE=2V*
440
450
450
300
80
1200
=10mA, VCE=2V*
I
C
=0.5A, VCE=2V*
I
C
=1A, VCE=2V*
I
C
=5A, VCE=2V*
I
C
=20A, VCE=2V*
I
C
150 MHz IC=50mA, VCE=10V
f=50MHz
60 80 pF VCB=10V, f=1MHz
120 ns IC=4A, IB=40mA, VCC=10V
310 ns IC=4A, IB=40mA, VCC=10V
Page 3
FZT1048A
TYPICAL CHARACTERISTICS
- (V)
CE(sat)
V
- Typical Gain
FE
h
- (V)
BE(on)
V
800
600
400
200
+25°C
1
0.8
0.6
0.4
0.2
0
1m
IC/IB=200
IC/IB=100
IC/IB=50
10m 100m 1 10 100
- (V)
CE(sat)
V
IC- Collector Current (A)
VCE(sat) v IC
VCE=2V
+100°C
+25°C
-55°C
0
10m1m 100m 1 10 100 1m 10m 100m 100101
- (V)
BE(sat)
V
IC - Collector Current (A)
hFE v IC
1.5
VCE=2V
1.2
0.9
0.6
-55°C
0.3
0
10m1m 100m 1 10 100
IC- Collector Current (A)
BE(on)
V
v I
C
+25°C
+100°C
+150°C
- Collector Current (A)
C
I
IC/IB=100
0.6
0.4
0.2
0
1m
+150°C
+100°C
+25°C
-55°C
10m 100m 1 10 100
IC- Collector Current (A)
VCE(sat) v IC
1.2
IC/IB=100
1
0.8
0.6
0.4
0.2
0
IC - Collector Current (A)
VBE(sat) v IC
100
10
DC
1s
100ms
10ms
1ms
100us
110100
100m
1
100m
VCE- Collector Emitter Voltage (V)
Safe Operating Area
-55°C
+25°C
+100°C
+150°C
Loading...