Diodes FZT1047A User Manual
SOT223
SOT223 NPN SILICON PLANAR
B
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - AUGUST 1997
FEATURES
*V
* 5 Amp Continuous Current
* 20 Amp Pulse Current
* Low Saturation Voltage
* High Gain
* Extremely Low Equivalent On-resistance; R
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature
Range
CEO
= 10V
=25°C P
amb
CE(sat)
CBO
CEO
EBO
CM
C
B
tot
T
j:Tstg
= 44mΩ at 5A
-55 to +150 °C
FZT1047A
C
35 V
10 V
5V
20 A
5A
500 mA
2.5 W
E
C
FZT1047A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
= 25°C unless otherwise stated).
amb
VALUE
UNIT CONDITIONS.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
35 65 V
35 55 V
10 16 V IC=10mA
35 60 V
5 8.9 V
0.3 10 nA VCB=20V
0.3 10 nA VEB=4V
0.3 10 nA V
25
50
140
220
40
70
200
350
mV
mV
mV
mV
925 1000 mV IC=5A, IB=25mA*
890 975 mV IC=5A, VCE=2V*
280
290
300
200
60
430
440
450
330
110
1200
150 MHz IC=50mA, VCE=10V
85 110 pF VCB=10V, f=1MHz
130 ns IC=4A, IB=40mA, VCC=10V
230 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
I
=100µA
C
I
=100µA
C
I
=100µA, VEB=1V
C
I
=100µA
E
=20V
CES
IC=0.5A, IB=10mA*
I
=1A, IB=10mA*
C
I
=3A, IB=15mA*
C
I
=5A, IB=25mA*
C
IC=10mA, VCE=2V*
I
=0.5A, VCE=2V*
C
I
=1A, VCE=2V*
C
I
=5A, VCE=2V*
C
I
=20A, VCE=2V*
C
f=50MHz
I
=4A, IB=±40mA,
C
V
=10V
CC
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