Diodes FMMTL718 User Manual
A
f
Features and Benefits
• BV
• I
• I
• Low Saturation Voltage V
• h
• 500mW power dissipation
• Complementary part number FMMTL618
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
> -20V
CEO
= -1A Continuous Collector Current
C
= -2A Peak Pulse Current
CM
< -320mV @ -1A
characterised up to -1.5A for high current gain hold-up
FE
CE(sat)
SOT23
Product Line o
Diodes Incorporated
FMMTL718
20V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23
Mechanical Data
• Case: SOT-23
• UL Flammability Rating 94V-0
• Case material: molded Plastic.
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish annealed over Copper plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (Approximate)
Applications
• MOSFET Gate Driving
• DC-DC Converters
• Charging circuit
• Power switches
C
B
Top View
E
Device Symbol
Top View
-
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMTL718TA L78 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
FMMTL718
Document Number: DS33132 Rev. 2 - 2
L78 = Product Type Marking Code
1 of 5
www.diodes.com
June 2011
© Diodes Incorporated
A
f
)
)
)
Product Line o
Diodes Incorporated
FMMTL718
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
-20 V
-20 V
-5 V
-1 A
-2 A
-200 mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 500 mW
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Lead (Note 5)
Operating and Storage Temperature Range T
Notes: 4. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
Electrical Characteristics @T
when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
= 25°C unless otherwise specified
A
R
θJA
R
θJL
-55 to +150
J, TSTG
250
197
°C/W
°C/W
°C
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 6)
Collector-Emitter Saturation Voltage
(Note 6)
Base-Emitter Turn-On Voltage(Note 6)
Base-Emitter Saturation Voltage(Note 6)
Equivalent On-Resistance
Output Capacitance
Transition Frequency
Turn-On Time
Turn-Off Time
Note: 6.
Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
BV
BV
BV
I
I
I
V
CE(sat)
V
BE(on
V
BE(sat
R
CE(sat
C
CBO
CEO
EBO
CBO
EBO
CES
h
FE
obo
f
T
t
on
t
off
-20 -65 V
-20 -55 V
-5 -8.8 V
-10 nA
-10 nA
-10 nA
300
300
200
120
50
500
450
320
200
80
-33
-130
-230
-315
-50
-180
-320
-450
-0.85 -1.0 V
-0.95 -1.1 V
210 mΩ I
9 12 pF
265 MHz
108 ns
121 ns
mV
mV
mV
mV
IC = -100 µA
IC = -10 mA
I
= -100 µA
E
V
CB
V
EB
VCE= -15V
I
= -10mA, V
C
I
= -100mA, VCE = -2V
C
I
= -0.5A, VCE = -2V
C
= -1A, VCE = -2V
I
C
I
= -1.5A, V
C
I
=- 100mA, IB = -10mA
C
I
=- 500mA, IB = -20mA
C
I
= -1A, IB = -50mA
C
= -1.5A, IB = -100mA
I
C
I
= -1.25A, V
C
I
= -1.25A, I
C
= -1.5A
C
V
CB
V
CE
f = 100MHz
V
CC
I
B1
= -15V
= -4V
= -2V
CE
= -2V
CE
= -2V
CE
= -100mA
B
= -10V, f = 1MHz
= -10V, IC = -50mA,
=-10V, IC =-1A
= IB2 = -10mA
FMMTL718
Document Number: DS33132 Rev. 2 - 2
2 of 5
www.diodes.com
June 2011
© Diodes Incorporated
Loading...