Diodes FMMTL717 User Manual
C
SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; R
COMPLEMENTARY TYPE – FMMTL617
=160mΩ at 1.25A
CE(sat)
FMMTL717
E
PARTMARKING DETAIL – L77
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
-12 V
-12 V
-5 V
-1.25 A
-4 A
-200 mA
-500 mW
-55 to +150 °C
B
FMMTL717
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
Switching times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
on
t
off
-12 -35 V
I
=-100µA
C
-12 -25 V IC=-10mA*
-5 -8.5 V
=-100µA
I
E
-10 nA VCB=-10V
-10 nA VEB=-4V
-10 nA VCE=-10V
-24
-94
-160
-200
-40
-140
-240
-290
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
I
=-500mA, IB=-20mA*
C
I
=-1A, IB=-50mA*
C
I
=-1.25A,IB=-50mA
C
-970 -1100 mV IC=-1.25A, IB=-50mA*
-875 -1000 mV IC=-1.25A, VCE=-2V*
300
300
180
100
50
490
450
275
180
110
IC=-10mA, VCE=-2V
I
=-100mA, VCE=-2V*
C
I
=-1A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-3A, VCE=-2V*
C
205 MHz IC=-50mA, VCE=-10V
f=100MHz
15 20 pF VCB=-10V, f=1MHz
76
149
ns
ns
IC=-1A, VCC=-10V
I
B1=IB2
=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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