Diodes FMMTL618 User Manual
C
SOT23 NPN SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – NOVEMBER 1997
FEATURES
Very low equivalent on-resistance; R
COMPLEMENTARY TYPE – FMMTL718
=140mΩ at 1.25A
CE(sat)
FMMTL618
E
PARTMARKING DETAIL – L68
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=25°C P
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
60 V
20 V
5V
1.25 A
4A
200 mA
500 mW
-55 to +150 °C
B
FMMTL618
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
Switching times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
on
t
off
60 105 V
I
=100µA
C
20 30 V IC=10mA*
58.5 V
=100µA
I
E
10 nA VCB=16V
10 nA VEB=4V
10 nA VCE=16V
18
80
130
170
260
35
160
200
280
350
mV
mV
mV
mV
mV
I
=100mA, IB=10mA*
C
I
=500mA, IB=25mA*
C
I
=1A, IB=100mA*
C
I
=1.25A, IB=100mA*
C
I
=2A, IB=200mA*
C
1000 1100 mV IC=1.25A, IB=100mA*
850 1000 mV IC=1.25A, VCE=2V*
200
300
250
200
100
50
400
440
400
300
190
100
I
=10mA, VCE=2V
C
I
=200mA, VCE=2V*
C
I
=500mA, VCE=2V*
C
I
=1A, VCE=2V*
C
I
=2A, VCE=2V*
C
I
=3A, VCE=2V*
C
195 MHz IC=50mA, VCE=10V
f=100MHz
912pFV
72
388
ns
ns
=10V, f=1MHz
CB
IC=1A, VCC=10V
I
=-IB2=10mA
B1
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Loading...