Diodes FMMTA92 User Manual
SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - MARCH 2001 ✪
FMMTA92
PARTMARKING DETAILS: – FMMTA92 - 4E
– FMMTA92R - 8E
C
B
COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA92 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
FMMTA92
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
-300 V
-300 V IC=-1mA, IB=0*
-5 V
-0.25
µA
µA
-0.1
µA
-0.5 V IC=-20mA, IB=-2mA*
-0.9 V IC=-20mA, IB=-2mA*
25
40
25
Transition Frequency f
Output Capacitance C
T
obo
*Measured under pulsed conditions. Pulse width=300
50 MHz IC=-10mA, VCE=-20V
6pFVCB=-20V, f=1MHz
µs. Duty cycle ≤2%
-300 V
-300 V
-5 V
-200 mA
330 mW
-55 to +150 °C
=-100µA, IE=0
I
C
I
=-100µA, IC=0
E
V
=-200V, IE=0
CB
V
=-160V, IE=0-
CB
=-3V, IE=0
V
EB
IC=-1mA, VCE=10V*
=-10mA, VCE=10V*
I
C
I
=-30mA,VCE=-10V*
C
f=20MHz
E
TBA
FMMTA92
o
i
t
a
60
R
r
e
f
s
n
a
r
T
t
n
e
50
r
r
u
C
d
r
a
w
r
o
F
40
c
i
t
0.1
a
t
S
E
F
h
)
s
t
l
o
V
(
3.0
e
g
a
t
l
o
V
n
o
i
2.0
t
a
r
u
t
a
S
r
e
t
t
1.0
i
m
E
r
o
t
c
e
l
l
0
o
C
)
t
a
s
(
E
C
V
1.0
C
-Collector Current (mA) IC-Collector Current (mA)
I
hFEv I
IC / IB=10
1.0
IC-Collector Current (mA)
VCE(sat) vs IC
TYPICAL CHARACTERISTICS
)
170
z
H
M
150
(
y
c
130
n
e
VCE=10V
10
C
100
10
100
u
110
q
e
r
F
90
n
o
i
t
70
i
s
n
a
50
r
T
T
30
f
0.1
VCE=20V
1.0
fTvs I
10
100
C
TBA
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