Diodes FMMTA56 User Manual
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 – MARCH 2001 ✪
FEATURES
FMMTA56
* Gain of 50 at I
=100mA
C
C
PARTMARKING DETAIL - FMMTA56 - 2G
FMMTA56R - MB
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA56 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
C
tot
T
j:Tstg
amb
= 25°C).
FMMTA56
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector-Emitter Cut-Off
Current
Collector-Base Cut-Off Current I
Static Forward Current Transfer
Ratio
Collector-Emitter Saturation
Voltage
Base-Emitter
Turn-On Voltage
Transition
Frequency
*Measured under pulsed conditions. Pulse width=300
V
(BR)CEO
V
(BR)EBO
I
CES
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
-80 V IC=-1mA, IB=0*
-4 V
-0.1
-0.1
50
50
-0.25 V IC=-100mA, IB=-10mA*
-1.2 V IC=-100mA, VCE=-1V*
100 MHz IC=-10mA, VCE=-2V
µs. Duty cycle ≤2%
-80 V
-80 V
-4 V
-500 mA
330 mW
-55 to +150 °C
=-100µA, IC=0
I
E
=-60V
µA
µA
V
CE
=-80V, IE=0
V
CB
V
=-60V, IE=0
CB
IC=-10mA, VCE=1V*
I
=-100mA, VCE=1V*
C
f=100MHz
E
B
TBA
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