Diodes FMMTA14 User Manual
SOT23 NPN SILICON PLANAR
FMMTA12 Not Recommended for New
Design Please Use FMMTA14
DARLINGTON TRANSISTORS
ISSUE 4 - DECEMBER 1996
COMPLEMENTARY TYPES - FMMTA12 NONE
FMMTA13 FMMTA63
FMMTA14 FMMTA64
FMMTA12
FMMTA13
FMMTA14
C
E
PARTMARKING DETAILS FMMTA12 3W
B
FMMTA13 1M
FMMTA14 1N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA12 FMMTA13/14 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
CES
EBO
C
tot
j:Tstg
amb
20 40 V
300 mA
330 mW
-55 to +150 °C
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter FMMTA12
Breakdown Voltage FMMTA13/14
Collector Cut-Off FMMTA12
Current
Collector Cut-Off FMMTA12
Current FMMTA13/14
Emitter Cut-Off Current I
Static Forward FMMTA12
Current Transfer FMMTA13
V
(BR)CES
I
CES
I
CBO
EBO
h
FE
Ratio FMMTA13
FMMTA14
FMMTA14
Collector-Emitter FMMTA12
Saturation Voltage FMMTA13/14
Base-Emitter FMMTA12
On Voltage FMMTA13/14
*Measured under pulsed conditions. Pulse width =300
Spice parameter data is available upon request for these devices
For typical graphs see FMMT38A datasheet
V
CE(sat)
V
BE(on)
20
40
100 nA VCB=15V, VBE=0
100
100nAnA
100 nA VEB=10V, IC=0
20K
5K
10K
10K
20K
1.0
0.9
1.4
2.0
µs. Duty cycle ≤ 2%
V
V
V
V
V
V
40 V
40 V
10 V
=100µA, I
I
C
I
=100µA, I
C
B
B
=0*
=0*
VCB=15V, IE=0
=30V, IE=0
V
CB
=10mA, V
I
C
=10mA, V
I
C
=100mA, V
I
C
=10mA, V
I
C
=100mA, V
I
C
CE
CE
CE
=5V*
=5V*
CE
=5V*
CE
=5V*
=5V*
IC=10mA, IB=0.01mA
=100mA, IB=0.1mA
I
C
IC=10mA, VCE=5V*
=100mA,VCE=5V*
I
C
Loading...