Diodes FMMTA06 User Manual

FMMTA0 6

SOT23 NPN SILICON PLANARMEDIUM POWER TRA NSISTORS

SUMM ARY
V

(BR)CEO

> 80V

C(cont)

= 500mA

I

DESCRIPTION

80V mediumpower NPNtransistor in a compact SOT23
package

FEATURES

80V V

•

•

•

CEO

Compac t SOT 23 pa c k a ge

HFE50 @ IC= 100mA

APPLICATIONS

•

Low pow er mot or driv ing c irc uits

ORDERING INFORMATION

DEVICE REEL

FMMTA06TA

SIZE

7” 8mm 3,000

TAPE WIDTH

QUANTITY PER

REEL

S

T

2

3

O

SYMBOL

PINOUT

DEVICE MARKING

•

1G

ISSUE 2 - MAY 2004

TOP VIEW

1

SEMICONDUCTORS

FMMTA0 6

ABS OLUT E MA X IMUM RA T I NGS

PAR AMETER SYMBO L LIMIT UNIT

Colle ctor-base voltage V
Colle ctor-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous c olle ctor current I
Base c urrent I
Pow e r dissipation @ T

= 25° C

A

P

CBO
CEO

EBO
CM
C
B

D

Linear derating factor
Operating and storage temperature T

j;Tstg

THERMAL RESIST A NCE

PAR AMETER SYMBOL VALUE UNIT

Junction t o ambient

R⍜

JA

80 V
80 V

4V

1A
500 mA
100 mA
330

2.64

mW

mW/° C

-55 to + 150 °C

379 ° C/W

SEMICONDUCTORS

ISSUE 2 - MAY 2004

2

CHARACTERISTICS

FMMTA0 6

ISSUE 2 - MAY 2004

3

SEMICONDUCTORS

FMMTA0 6

ELECTRICAL CHARAC TERISTICS (at T

= 25° C unles s ot herwis e s t ated)

amb

PARAMETER S YMBOL MIN. TYP. MAX. UNIT COND ITI O NS

Colle ctor-base breakdown voltage V
Colle ctor-emitter breakdown voltage V
Emitter-base breakdown voltage V
Colle ctor-emitter cut-off current I
Colle ctor-base cut-off curre nt I
St a tic forw ard c urrent transf er ratio H

Colle ctor-emitter saturation voltage V
Base-emitter turn-on voltage V
Transition f requency f

NOTES

* Me as ured under puls e d c ondit ions . Pulse width= 3 00 ␮S. Duty cycle ⱕ2%

(BR)CBO
(BR)CEO

(BR)EBO
CES
CBO

FE

CE(sat)

BE(on)

T

80 V IC=1mA
80

4V

100 nA V
100

V

nA

IC= 10mA*
I

= 100␮A

E

= 60V

CES

VCB= 80V

5050120 IC= 10mA, VCE=1V*

= 100mA, VCE=1V*

I

C

0.25 V IC= 100mA, IB= 10mA*

1.2 V IC=0.1A,VCE=1V*

100 IC= 10mA, VCE=2V,

f= 100MHz

SEMICONDUCTORS

ISSUE 2 - MAY 2004

4

TYPICAL CHARACTERISTICS

FMMTA0 6

ISSUE 2 - MAY 2004

5

SEMICONDUCTORS

FMMTA0 6

PACKAGE OUTLINE

Controlling dimensions are in millimet ers . A pprox imat e conve rsions are give n in inc hes

PA CK AGE D I ME NSI O NS

DIM

Min Max Min Max Min Max Max Max

DIM

A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004

Millimeters Inches

C

1.10

ᎏ

0.043 L 2.10 2.50 0.083 0.0985

ᎏ

D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025

F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM

G 1.90 NOM 0.075 NOM

Millimeters Inches

ᎏᎏ ᎏ

©Z etex Semic onduc t ors plc 2004

Europe

Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany

Telefon: [phone]
Fax: [phone]
[e-mail]

These of fice s a re s upport ed by age nt s and dis t ribut ors in major c ountries w orld- w ide .
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for

any purpose orformpart of any order orcontract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to a lt er without notice t he s pec ifica t ion, design, price or c ondit ions of supply of any produc t or service.

For the latest product information, log on to www.zetex.com

Americas

Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA

Telephone: [phone]
Fax: [phone]
[e-mail]

Asia P ac ific

Zetex (Asia) Ltd
3701-04 Metroplaza Towe r 1
Hing F ong R oad, Kw ai Fong
Hong Kong

Telephone: [phone]
Fax: [phone]
[e-mail]

Corporate He adquat ers

Zet ex Semiconductors plc
Zet ex T echnology Park, Chadde rt on
Oldham, OL9 9 LL
United Kingdom

Telephone ( 44 ) 16 1 622 4444
Fax: [phone]
[e-mail]

ISSUE 2 - MAY 2004

SEMICONDUCTORS

6