FMMTA0 6
SOT23 NPN SILICON PLANARMEDIUM POWER TRA NSISTORS
SUMM ARY
V
(BR)CEO
> 80V
C(cont)
= 500mA
I
DESCRIPTION
80V mediumpower NPNtransistor in a compact SOT23
package
FEATURES
80V V
•
•
•
CEO
Compac t SOT 23 pa c k a ge
HFE50 @ IC= 100mA
APPLICATIONS
•
Low pow er mot or driv ing c irc uits
ORDERING INFORMATION
DEVICE REEL
FMMTA06TA
SIZE
7” 8mm 3,000
TAPE WIDTH
QUANTITY PER
REEL
S
T
2
3
O
SYMBOL
PINOUT
DEVICE MARKING
•
1G
ISSUE 2 - MAY 2004
TOP VIEW
1
SEMICONDUCTORS
FMMTA0 6
ABS OLUT E MA X IMUM RA T I NGS
PAR AMETER SYMBO L LIMIT UNIT
Colle ctor-base voltage V
Colle ctor-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous c olle ctor current I
Base c urrent I
Pow e r dissipation @ T
= 25° C
A
P
CBO
CEO
EBO
CM
C
B
D
Linear derating factor
Operating and storage temperature T
j;Tstg
THERMAL RESIST A NCE
PAR AMETER SYMBOL VALUE UNIT
Junction t o ambient
R⍜
JA
80 V
80 V
4V
1A
500 mA
100 mA
330
2.64
mW
mW/° C
-55 to + 150 °C
379 ° C/W
SEMICONDUCTORS
ISSUE 2 - MAY 2004
2