Diodes FMMT734 User Manual
“SUPER SOT” SOT23 PNP SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – AUGUST 1997
FEATURES
* 625mW POWER DISSIPATION
* Very High h
* Extremely Low V
at High Current (5A)
FE
at High Current (1A)
CE(sat)
FMMT734
C
E
COMPLEMENTARY TYPE – FMMT634
B
PARTMARKING DETAIL – 734
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation P
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
-100 V
-100 V
-800 mA
-55 to +150 °C
SOT23
-12 V
-5 A
625 mW
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT734
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
-100 -130 V
I
=-100µA
C
-100 -116 V IC=-5mA*
-12 -17 V
=-100µA
I
E
-10 nA VCB=-80V
-10 nA VEB=-7V
-0.68
-0.72
-0.78
-0.86
-0.72
-0.90
-200 nA V
V
-0.75
V
-0.80
V
-0.86
V
-0.97
V
—
V
-1.05
=-80V
CES
I
=-100mA, IB=-1mA*
C
I
=-250mA,IB=-1mA*
C
I
=-500mA, IB=-5mA*
C
I
=-800mA, IB=-5mA*
C
I
=-800mA, IB=-5mA †*
C
I
=-1A, IB=-5mA*
C
-1.60 -1.75 V IC=-1A, IB=-5mA*
-1.30 -1.75 V IC=-1A, VCE=-5V*
Static Forward
Current Transfer
Ratio
h
FE
20K
15K
5K
60K
60K
50K
15K
150
20K
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
f
T
obo
(on)
(off)
140 MHz IC=-10mA, VCE=-10V
14 25 pF VCB=-10V, f=1MHz
460 ns IC=-500mA, VCC=-20V
1200 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
† T
=150°C
amb
=-10mA, VCE=-5V*
I
C
I
=-100mA, VCE=-5V*
C
I
=-1A, VCE=-5V*
C
I
=-2A, VCE=-5V*
C
I
=-5A, VCE=-5V*
C
I
=-1A, VCE=-2V*
C
f=100MHz
I
=±1mA
B
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