Diodes FMMT6520 User Manual
A
f
350V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23
Features and Benefits
• BV
• Maximum Continuous Collector Current I
• 330mW power dissipation
• Complementary part number FMMT6517
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
CEO
> -350V
SOT-23
= -500mA
C
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FMMT6520
Mechanical Data
• Case: SOT-23
• UL Flammability Rating 94V-0
• Case material: molded Plastic.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
• Weight: 0.008 grams (Approximate)
Applications
• Power switches
C
B
Top View
E
Device Symbol
Top View
-
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMT6520TA 520 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
FMMT6520
Document Number: DS33123 Rev. 3 - 2
www.diodes.com
520 = Product Type Marking Code
1 of 4
August 2011
© Diodes Incorporated
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FMMT6520
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
V
V
V
CBO
CEO
EBO
I
C
-350 V
-350 V
-5 V
-500 mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 330 mW
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Lead (Note 5)
Operating and Storage Temperature Range T
Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Electrical Characteristics @T
= 25°C unless otherwise specified
A
R
θJA
R
θJL
-55 to +150
J, TSTG
379
350
°C/W
°C/W
°C
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Static Forward Current Transfer Ratio
(Note 6)
Collector-Emitter Saturation Voltage
(Note 6)
Base-Emitter Saturation Voltage(Note 6)
Base-Emitter Turn-On Voltage(Note 6)
Output Capacitance
Transition Frequency
Note: 6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
BV
BV
BV
I
I
V
CE(sat)
V
BE(sat)
V
BE(on
C
CBO
CEO
EBO
CBO
EBO
h
FE
obo
f
T
-350 V
-350 V
-5 V
-50 nA
-50 nA
20
30
30
20
15
200
200
-300
-350
-500
-1000
-750
-850
-900
-2.0 V
6 pF
50 MHz
mV
mV
mV
mV
mV
IC = -100µA
IC = -1mA
I
= -10µA
E
V
= -250V
CB
V
= -3V
EB
= -1mA, V
I
C
= -10mA, VCE = -10V
I
C
I
= -30mA, VCE = -10V
C
I
= -50mA, VCE = -10V
C
= -100mA, V
I
C
I
=- 10mA, IB = -1mA
C
I
=- 20mA, IB = -2mA
C
I
= -30mA, IB = -3mA
C
I
= -50mA, IB = -5mA
C
I
= -10mA, I
C
= -20mA, I
I
C
I
= -30mA, I
C
I
= -100mA, V
C
V
= -20V, f = 1MHz
CB
V
= -20V, IC = -10mA,
CE
f = 20MHz
= -10V
CE
CE
= -1mA
B
= -2mA
B
= -3mA
B
CE
= -10V
= -10V
FMMT6520
Document Number: DS33123 Rev. 3 - 2
2 of 4
www.diodes.com
August 2011
© Diodes Incorporated
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