Diodes FMMT6517 User Manual

SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR

ISSUE 3  NOVEMBER 1995 ✪

FEATURES
* 350 Volt V
* Gain of 15 at IC=100mA

APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS

COMPLEMENTARY TYPE - FMMT6520
PARTMARKING DETAIL - 517

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Breakdown Voltages V

Cut-Off Currents I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer Ratio

Output Capacitance C

Transition Frequency f

*Measured under pulsed conditions. Pulse width=300

CEO

= 25°C P

amb

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

350 V

350 V IC=1mA, IB=0*

5V

20
30
30
20
15

obo

T

50 MHz IC=10mA, VCE=20V, f=20MHz

CBO

CEO

EBO

C

tot

j:Tstg

= 25°C unless otherwise stated).

amb

50 nA VCB=250V, IE=0

50 nA VEB=5V, IC=0

0.3

0.35

0.5

1.0

0.80

0.85

0.90

V
V
V
V

V
V
V

2.0 V IC=100mA, VCE=10V*

200
200

6pFV

µs. Duty cycle ≤2%

FMMT6517

C

SOT23

350 V

350 V

5V

500 mA

330 mW

-55 to +150 °C

=100µA, I

I

C

=10µA, I

I

E

I

=10mA, IB=1mA*

C

I

=20mA, IB=2mA*

C

=30mA, IB=3mA*

I

C

I

=50mA, IB=5mA*

C

I

=10mA, IB=1mA*

C

I

=20mA, IB=2mA*

C

=30mA, IB=3mA*

I

C

I

=1mA, VCE=10V

C

I

=10mA, VCE=10V*

C

=30mA, VCE=10V*

I

C

I

=50mA, VCE=10V*

C

=100mA, VCE=10V*

I

C

CB

=0

E

=0

C

=20V, f=1MHz

E

B

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