Diodes FMMT614 User Manual

SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR

ISSUE 3  APRIL 1996

FEATURES

up to 5k at Ic= 500mA

*h

FE

* Fast switching
* Low V

CE(sat)

at High I

c

FMMT614

C

E

PARTMARKING DETAILS  614

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

CBO

CEO

EBO

CM

C

tot

j:Tstg

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Sustaining Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off Current I

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter Saturation
Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Output Capacitance C

Switching Times t

*Measured under pulsed conditions. Pulse Width=300
Spice parameter data is available upon request for this device

Typical Characteristics graphs are in preparation. Contact your local Sales office for more information.

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

CBO

CES

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

obo

on

t

off

120 300 V

100 130 V IC=10mA, IB=0*

10 14 V

0.02 10 nA VCB=100V, IE=0

10

100 nA VEB=8V, IC=0

0.9

0.78

1.0

0.9

1.7 1.9 V IC=500mA, IB=5mA*

1.5 1.8 V IC=500mA, VCE=5V*

15K
5K

6pFV

0.7

2.5

µs. Duty cycle ≤2%

120 V

100 V

10 V

2A

500 mA

500 mW

-55 to +150 °C

I

=10µA, I

C

I

=10µA, I

E

=100V, IE=0

µA

V
V

V

CES

IC=500mA, IB=5mA*

=100mA, IB=0.1mA

I

C

IC=100mA, VCE=5V*

=500mA, VCE=5V*

I

C

=10V, f=100mHz

CB

µsI
µs

=100µA, I

C

=10V

V

S

=0

E

=0

C

=0.1mA

B

3 - 147

FMMT614

TYPICAL CHARACTERISTICS

2

+25°C

IC/IB=1000

C/IB

I

=2000

I

C/IB

1

0

1m 100m 10

=5000

10m 1

IC- Collector Current (A)

CE(sat)

V

v I

2

C/IB

=1000

I

1

-55°C

+25°C
+100°C
+150°C

0

1m 100m 10

10m 1

IC- Collector Current (A)

C

CE(sat)

V

v I

C

75k

CE

V

=5V

+100°C

+25°C

50k

-55°C

25k

0

1m 100m 10

10m 1

IC- Collector Current (A)

C

hFEv I

2

CE

=5V

V

1

-55°C

+25°C
+100°C
+150°C

0

1m 100m 10

10m 1

IC- Collector Current (A)

BE(on)

V

v I

C

2.4

I

C/IB

=1000

1.2

-55°C

+25°C
+100°C
+150°C

0

10m 1

IC- Collector Current (A)

BE(sat)

V

v IC

10

1

0.1

0.01

0.001
10m 1 100

DC

1s

100ms

10ms

1ms

100

µ

s

100m 10

VCE- Collector Emitter Voltage (V)

Safe Operating Area

10100m1m

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