Diodes FMMT597 User Manual

SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995
FMMT597
COMPLEMENTARY TYPE FMMT497 PARTMARKING DETAIL - 597
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Cut-Off Current I
Emitter Saturation Voltages V
Base-Emitter Turn-on Voltage V
Static Forward Current Transfer Ratio h
(BR)CBO
(BR)CEO
(BR)EBO
EBO
CES
CE(sat)
V
BE(sat)
BE(on)
FE
-300 V
-300 V IC=-10mA*
-5 V
-100 nA VCB=-250V
-100 nA VEB=-4V
-100 nA V
-0.25
-0.25VV
-1.0 V IC=-100mA,
-0.85 V IC=-100mA,VCE=-10V*
100 100
300
100
Transition Frequency f
Output Capacitance C
T
obo
*Measured under pulsed conditions. Pulse width=300
75 MHz IC=-50mA, VCE=-10V
10 pF VCB=-10V, f=1MHz
µs. Duty cycle 2%
Spice parameter data is available upon request for this device
-300 V
-300 V
-5 V
-1 A
-0.2 A
-200 mA
500 mW
-55 to +150 °C
I
=-100µA
C
I
=-100µA
E
=-250V
CES
IC=-50mA, IB=-5mA
=-100mA,
I
C
=-20mA*
I
B
=-20mA*
I
B
IC=-1mA, VCE=-10V
=-50mA,VCE=-10V*
I
C
=-100mA,VCE=-10V*
I
C
f=100MHz
E
B
3 - 145
FMMT597
TYPICAL CHARACTERISTICS
0.6 +25°C
0.4
IC/IB=10
0.4
IC/IB=50
0.3
0.2
0.1
0
1mA
320
VCE=10V
+100° C
240
+25° C
160
-55° C
80
0
1mA
0.9
VCE=10V
0.8
0.6
0.4
0.2
0
1mA
IC-Collector Current
100mA10mA
VCE(sat) v IC
100mA10mA 1A
IC-Collector Current
hFE V IC
100mA10mA
IC-Collector Current
VBE(on) v IC
-55° C
+25° C
+100° C
0.6 IC/IB=10
0.5
0.4
0.3
0.2
0.1
1A
0
-55° C
+25° C
+100° C
I
-Collector Current
C
1A10mA 100mA1mA
VCE(sat) v IC
0.9
IC/IB=10
0.8
0.6
-55° C
0.4
0.2
0
1mA
10mA
+25° C
+100° C
100mA 1A
IC-Collector Current
VBE(sat) v IC
1
0.1
DC
1s 100ms
0.01 10ms
1ms
100µs
1A
0.001 1
10
100
1000
VCE- Collector Emitter Voltage (V)
Safe Operating Area
3 - 146
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