Diodes FMMT596 User Manual
FMMT596
C
E
B
SOT 23 PNP silicon planar high voltage transistor
Ordering information
Device Reel size
(inches
FMMT596TA 7 8 3,000
Tape width
(mm)
Quantity
per reel
Device marking
596
C
Pinout - top view
Absolute maximum ratings
Parameter Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Peak pulse current I
Continuous collector current I
Base current I
Power dissipation at T
Operating and storage temperature range T
=25°C P
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
-220 V
-200 V
-5 V
-1 A
-0.3 A
-200 mA
500 mW
-55 to +150 °C
E
B
Issue 4 - July 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
FMMT596
NOTES:
Electrical characteristics (T
amb
= 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
V
(BR)CBO
-220 V IC=-100A
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
V
(BR)CEO
V
(BR)EBO
-200 V
=-10mA
I
C
-5 V IE=-100A
voltage
Collector cut-off current I
Emitter cut-off current I
Collector-emitter cut-off
CBO
EBO
I
CES
-100 nA VCB=-200V
-100 nA VEB=-4V
-100 nA V
CES
=-200V
current
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage V
Static forward current
transfer ratio
Transition frequency f
V
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
-0.2
-0.35VV
-1.0 V
IC=-100mA, IB=-10mA,
I
=-250mA,
B
I
=-25mA
B
=-250mA, IB=-25mA
I
C
-0.9 V IC=-250mA,
V
=-10V
CE
100 IC=-1mA, VCE=-10V
100
85 300
35
=-100mA, VCE=-10V
I
C
=-250mA, VCE=-10V
I
C
=-400mA, VCE=-10V
I
C
150 MHz IC=-50mA, VCE=-10V,
f=100MHz
Output capacitance C
obo
Switching times td 22 ns I
tr 19
10 pF VCB=-10V, f=1MHz
=-200mA, VCC=-80V
C
I
b1=Ib2
=-20mA
ts 472
tf 70
Switching times td 44 ns I
tr 31
=-100mA, VCC=-80V
C
b1=Ib2
=-10mA
I
ts 665
tf 76
(*)
(*)
(*)
(*)
(*)
(*)
(*)
(*) Measured under pulsed conditions. Pulse width = 300s. Duty cycle ⱕ2%.
Issue 4 - July 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
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