Diodes FMMT555 User Manual
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 – AUGUST 2003
FEATURES
* 150 Volt V
* 1 Amp continuous current
COMPLEMENTARY TYPE – FMMT455
PARTMARKING DETAIL – 555
CEO
FMMT555
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
-160 V
-150 V
-5 V
-2 A
-1 A
-200 mA
500 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
* Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
-160 V
=-100A
I
C
-150 V IC=-10mA*
-5 V
-0.1
-10
-0.1
A
A
A
=-100A
I
E
V
=-140V
CB
=-140V, T
V
CB
V
=-4V
EB
amb
=100°C
-0.3 V IC=-100mA, IB=-10mA*
-1 V IC=-100mA, IB=-10mA*
-1 V IC=-100mA, VCE =-10V*
50
50 300
IC=-10mA, VCE =-10V*
I
=-300mA, VCE =-10V*
C
100 MHz IC=-50mA, VCE =-10V
f=100MHz
10 pF VCB =-10V, f=1MHz
s. Duty cycle 2%
Spice parameter data is available upon request for this device
3 - 1313 - 132
FMMT555
TYPICAL CHARACTERISTICS
-0.8
-0.6
)
s
t
l
Vo
(
-0.4
-
)
t
a
s
(
E
-0.2
C
V
0
100
)
%
80
(
n
i
a
G
60
d
e
s
i
l
a
40
m
r
o
N
20
-
E
F
h
IC/IB=10
-0.0001
-0.001
-0.01 -0.1
C
I
-
Collector Current (Amps)
CE(sat)vIC
V
VCE=-10V
0
-0.0001
-0.001
-0.01 -0.1
IC -
Collector Current (Amps)
C
hFEvI
-1
1
ZTX 554/ 5 5-2
tsµstr
ns
500
e
400
m
i
t
g
300
n
i
h
c
t
200
i
w
S
100
0
ts
5
4
tf
3
2
td
1
tr
0
-0.01
IC -
Collector Current (Amps)
-0.1
Switching Speeds
-1.4
-1.2
)
s
t
l
-1.0
Vo
- (
)
t
-0.8
a
s
(
E
B
V
-0.6
IC/IB=10
-0.0001
-0.001
IC -
Collector Current (Amps)
BE(sat)vIC
V
IB1=IB2=IC/10
-0.01 -0.1
tf
ns
1000
800
600
td
ns
100
400
50
200
0
0
-1
-1
-1.4
-1.2
)
s
t
l
-1.0
Vo
- (
E
B
-0.8
V
-0.6
-0.0001
C
I
- Collector Current (Amps)
VCE=-10V
-0.001
BE(on)vIC
V
-0.01
-0.1
-1
10
1
0.1
0.01
-Collector Current (A)
C
I
0.001
0.1V
Single Pulse Test at Tamb=25°C
DC
1s
100ms
10ms
1ms
s
100
10V 100V
1V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
1000V
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