Diodes FMMT549A User Manual
A
f
30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23
Features and Benefits
• BV
• Maximum Continuous Collector Current I
• 500mW power dissipation
• Complementary type:
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
> -30V
CEO
o FMMT549 – FMMT449
o FMMT549A – N/A
SOT23
Top View
= -1A
C
B
Device Symbol
Product Line o
Diodes Incorporated
FMMT549 / FMMT549A
Mechanical Data
• Case: SOT23
• UL Flammability Rating 94V-0
• Case material: molded Plastic.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
• Weight: 0.008 grams (Approximate)
C
E
Top View
Pin-Out
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMT549TA 549 7 8 3,000
FMMT549ATA 59A 7 8 3,000
Notes: 1. No purposefully added lead.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
FMMT549 / FMMT549A
Document Number: DS33098 Rev. 4 - 2
xxx
www.diodes.com
xxx = Product Type Marking Code
FMMT549: xxx = 549
FMMT549A: xxx = 59A
1 of 5
September 2011
© Diodes Incorporated
A
f
)
)
Product Line o
Diodes Incorporated
FMMT549 / FMMT549A
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
-35 V
-30 V
-5 V
-1 A
-2 A
-200 mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Lead (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
P
R
R
T
J, TSTG
θJA
θJL
D
500 mW
250
197
-55 to +150
°C/W
°C/W
°C
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
BV
BV
BV
I
CBO
I
EBO
CBO
CEO
EBO
Static Forward Current Transfer Ratio (Note 6)
h
FE
FMMT549 100 160 300 -
FMMT549A 150 200 500 -
Collector-Emitter Saturation Voltage
V
CE(sat)
FMMT549A - Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Output Capacitance
Transition Frequency
Switching Times
Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
6.
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
V
V
BE(sat
BE(on
C
obo
f
T
t
on
t
off
-35 - - V
-30 - - V
-5 - - V
- - -0.1
- - -10
- - -0.1 µA
70 200 -
80 130 -
40 80 -
- -250 -500
- -500 -750
-300
- -900 -1250 mV
- -850 -1000 mV
- - 25 pF
100 - - MHz
- 50 - ns
- 300 - ns
µA
-
mV
mV
IC = -100µA
IC = -10mA
I
= -100µA
E
= -30V
V
CB
V
= -30V, TA = 100°C
CB
V
= -4V
EB
I
= -50mA, VCE = -2V
C
I
= -1A, VCE = -2V
C
I
= -2A, VCE = -2V
C
I
= -500mA, VCE = -2V
C
= -500mA, VCE = -2V
I
C
I
= - 1A, IB = -100mA
C
= - 2A, IB = -200mA
I
C
= -100mA, IB = -1mA
I
C
I
= -1A, I
C
I
= -1A, V
C
V
CB
V
CE
= -100mA
B
= -2V
CE
= -10V, f = 1MHz
= -5V, IC = -100mA,
f = 100MHz
I
= -500mA, V
C
= I
= -50mA
I
B1
B2
CC
= -10V
FMMT549 / FMMT549A
Document Number: DS33098 Rev. 4 - 2
2 of 5
www.diodes.com
September 2011
© Diodes Incorporated
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