Diodes FMMT497 User Manual
FMMT497
SOT23 NPN silicon planar high voltage high
performance transistor
Complementary part number - FMMT597
Device marking - 497
B
C
Pinout - top view
Absolute maximum ratings
Parameter Symbol Value Unit
C
E
E
B
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Continuous collector current I
Peak pulse current I
Base current I
Power dissipation at T
Operating and storage temperature range T
Issue 4 - November 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
=25°C P
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
300 V
300 V
5V
500 mA
1A
200 mA
500 mW
-55 to +150 °C
FMMT497
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter Symbol Min. Typ. Max.Unit Conditions
Collector-base
V
(BR)CBO
300 V IC = 100A
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
V
CEO(sus)
V
(BR)EBO
300 V
5VI
= 10mA
I
C
= 100A
E
breakdown voltage
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
Collector-emitter
saturation voltage
Base-emitter
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
100 nA V
100 nA V
100 nA V
0.2
0.3
V
V
= 250V
CB
= 250V
CES
= 4V
EB
IC = 100mA, IB = 10mA
= 250mA, IB = 25mA
I
C
1.0 V IC = 250mA, IB = 25mA
saturation voltage
Base-emitter
V
BE(on)
1.0 V IC = 250mA, V
turn on voltage
(*)
CE
= 10V
Static forward current
transfer ratio
h
FE
100
80
300
20
Transition frequency f
output capacitance C
T
obo
75 MHz IC = 50mA, V
5pFV
Switching performance td 53 ns V
tr 126 ns
ts 2.58 s
tf 228 ns
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
IC = 1mA, V
I
= 100mA, V
C
IC = 250mA, V
CE
CE
= 10V
CE
CE
= 10V
f = 100MHz
= 10V, f = 1MHz
CB
= 100V, IC = 100mA,
CC
Ib1 = -Ib2 = 10mA
= 10V
= 10V
(*)
(*)
Issue 4 - November 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
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