Diodes FMMT495 User Manual
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150V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT23
Feature
• BV
• I
• I
• 500mW Power Dissipation
• h
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
> 150V
CEO
= 1A Continuous Collector Current
C
= 2A Peak Pulse Current
CM
characterised up to 1A for high current gain hold up
FE
SOT23
Top View Device Symbol
B
FMMT495
Mechanical Data
• Case: SOT23
• Case Material: molded plastic, “Green” molding compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight 0.008 grams (approximate)
C
E
C
B
E
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMT495TA AEC-Q101 495 7 8 3,000
FMMT495TC AEC-Q101 495 13 8 10,000
FMMT495QTA Automotive 495 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
<1000ppm antimony compounds.
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com
Marking Information
FMMT495
Document number: DS33096 Rev. 4 - 2
495
495 = Product Type Marking Code
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Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
ESD Ratings (Note 8)
V
CBO
V
CEO
V
EBO
I
I
CM
P
R
R
T
J, TSTG
FMMT495
C
I
B
D
JA
JL
170 V
150 V
7 V
1 A
2 A
200 mA
500 mW
250
197
-55 to +150
°C/W
°C/W
°C
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT495
Document number: DS33096 Rev. 4 - 2
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Thermal Characteristics and Derating Information
1
V
CE(sat)
Limit
100m
DC
1s
10m
Collector Curre nt (A)
C
-I
15 x 15mm FR4
1oz Copper
1m
110100
100ms
10ms
1ms
100µs
-VCE Collector-Emitter Voltage (V)
Safe Op erating A rea
FMMT495
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160
Max Power Dissi pa tion (W)
15 x 15mm FR4 1oz Copper
Temperature (°C)
Derating Curve
240
15 x 15mm FR4 1oz Copper
200
160
D=0.5
120
80
D=0.2
40
0
100µ 1m 10m 100m 1 10 100 1k
Therm a l Resis tance (°C/W )
D=0.1
Pulse Width (s)
Single Pulse
D=0.05
Transient Thermal Impedance
15 x 15mm FR4 1oz Copper
100
10
1
0.1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissi pa tion (W)
Pulse Width (s)
Puls e P ower D is s ipation
FMMT495
Document number: DS33096 Rev. 4 - 2
3 of 7
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October 2012
© Diodes Incorporated
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