Diodes FMMT493A User Manual

SOT23 60V NPN SILICON PLANAR
MEDIUM POWER PLANAR TRANSISTOR

FMMT493A

NPN: V

= 60V, IC= 1A, VCE

CEO

(SAT)

= 0.5V @1A

Description:

This 60V NPN transistor provides users with
performance combining low saturation and high h
with a continuous current capability of 1A, ensuring
improved circuit efficiencies.

Features

Low saturation voltage
High h
I

C

min 300 @ 250mA

FE

= 1A

Applications

· Various driving functions including:-

- Motors

- Actuators

- Soleniod & Relays

· Backlight Inverters.

· DC_DC Modules.

C

E

B

FE

SOT23

Device Reel Size Tape Width Quantity

(inches) (mm) Per Reel
FMMT493ATA 7 8mm embossed 3000 units
FMMT493ATC 13 8mm embossed 10000 units

ISSUE 2 - AUGUST 2003

1

E

C

B

TOP VIEW

SEMICONDUCTORS

FMMT493A

ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector - Base

Breakdown Voltage
Collector - Emitter

Breakdown Voltage

Emitter - Base

Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector - Emitter

Saturation Voltage

Base - Emitter Saturation
Voltage

Base Emitter Turn On
Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

CBO

CES

EBO

V

CE(SAT)

V

BE(SAT)

V

BE(ON)

h

FE

T

OBO

120 V IC= 100␮A

60 V IC= 10mA*

5VI

= 100␮A

E

100 nA VCB= 45V
100 nA V

CES

= 45V

100 nA VEB=4V

0.25

0.5

V
V

IC= 500mA, IB= 50mA
I

= 1A, IB= 100mA

C

1.15 V IC=1A, IB= 100mA

1.0 V IC= 1A, VCE- 10V

300
500
300
100
20

1200

I

=1mA,VCE= 10V

C

I

= 150mA, VCE= 10V

C

I

= 250mA, VCE= 10V

C

I

= 500mA, VCE= 10V

C

I

= 1A, VCE= 10V

C

150 Mhz IC= 50mA, VCE= 10V

f = 100MHz

10 pF VCB= 10V, f = 1MHz

*Measured under pulsed conditions. Pulse width = 300␮s. Duty Cycle <2%

SEMICONDUCTORS

2

ISSUE 2 - AUGUST 2003

(V)

100m

CE(SAT)

V

1

0m

Tamb=25°C

IC/IB=100

IC/IB=50

ELECTRICAL CHARACTERICS

0.40

0.35

0.30

(V)

0.25

0.20

V

0.15

CE(SAT)

IC/IB=10

0.10

0.05

FMMT493A

IC/IB=50

100°C

25°C

-55°C

1m 10m 100m 1

ICCollector Current (A)

V

CE(SAT)vIC

1.2

1.0

0.8

0.6

0.4

Normalised Gain

0.2

0.0

100°C

25°C

-55°C

1m 10m 100m 1

VCE=10V

ICCollector Current (A)

hFEvI

C

1.0

VCE=10V

0.8

(V)

BE(ON)

V

0.6

0.4

-55°C

25°C

100°C

1400
1200
1000
800
600
400
200
0

1m 10m 100m 1

ICCollector Current (A)

V

CE(SAT)vIC

IC/IB=50

1.0

)

FE

(V)

)
(

V

Typical Gain (h

-55°C

0.8

SAT

0.6

BE

0.4

0.2
1m 10m 100m 1

25°C

100°C

ICCollector Current (A)

V

BE(SAT)vIC

0.2
1m 10m 100m 1

ICCollector Current (A)

ISSUE 2 - AUGUST 2003

V

BE(ON)vIC

3

SEMICONDUCTORS

FMMT493A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

CBO

CEO

EBO

C

CM

B

tot

j:Tstg

120 V

60 V

5V
1A

2A
200 mA
500 mW

-55 to +150 °C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R

␪JA

Mounted on a 15mm x 15mm x 0.6mm alumina substrate connected using 25mm x 0.5 dia copper wire.

SEMICONDUCTORS

4

250 ⬚C/W

ISSUE 2 - AUGUST 2003

THERMAL CHARACTERISTICS

0.6

FMMT493A

1

DC

100m

Collector Current (A)

C

I

10m

1s

100ms

10ms

1ms

100µs

Single Pulse T

100m 1 10 100

amb

=25°C

VCECollector-Emitter Voltage (V)

Safe Operating Area

250

200

D=0.5

150

100

D=0.2

50

0

Thermal Resistance (°C/W)

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

0.5

0.4

0.3

0.2

0.1

0.0

Max Power Dissipation (W)

0 20 40 60 80 100 120 140 160

Temperature (°C)

Derating Curve

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5

SEMICONDUCTORS

FMMT493A

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

N

DIM Millimetres Inches

Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C – 1.10 – 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N

NOM 0.95 NOM 0.037

© Zetex plc 2003

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ISSUE 2 - AUGUST 2003

SEMICONDUCTORS

6