Diodes FMMT493A User Manual

SOT23 60V NPN SILICON PLANAR
MEDIUM POWER PLANAR TRANSISTOR

FMMT493A

NPN: V

= 60V, IC= 1A, VCE

CEO

(SAT)

= 0.5V @1A

Description:

This 60V NPN transistor provides users with
performance combining low saturation and high h
with a continuous current capability of 1A, ensuring
improved circuit efficiencies.

Features

Low saturation voltage
High h
I

C

min 300 @ 250mA

FE

= 1A

Applications

· Various driving functions including:-

- Motors

- Actuators

- Soleniod & Relays

· Backlight Inverters.

· DC_DC Modules.

C

E

B

FE

SOT23

Device Reel Size Tape Width Quantity

(inches) (mm) Per Reel
FMMT493ATA 7 8mm embossed 3000 units
FMMT493ATC 13 8mm embossed 10000 units

ISSUE 2 - AUGUST 2003

1

E

C

B

TOP VIEW

SEMICONDUCTORS

FMMT493A

ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector - Base

Breakdown Voltage
Collector - Emitter

Breakdown Voltage

Emitter - Base

Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector - Emitter

Saturation Voltage

Base - Emitter Saturation
Voltage

Base Emitter Turn On
Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

CBO

CES

EBO

V

CE(SAT)

V

BE(SAT)

V

BE(ON)

h

FE

T

OBO

120 V IC= 100␮A

60 V IC= 10mA*

5VI

= 100␮A

E

100 nA VCB= 45V
100 nA V

CES

= 45V

100 nA VEB=4V

0.25

0.5

V
V

IC= 500mA, IB= 50mA
I

= 1A, IB= 100mA

C

1.15 V IC=1A, IB= 100mA

1.0 V IC= 1A, VCE- 10V

300
500
300
100
20

1200

I

=1mA,VCE= 10V

C

I

= 150mA, VCE= 10V

C

I

= 250mA, VCE= 10V

C

I

= 500mA, VCE= 10V

C

I

= 1A, VCE= 10V

C

150 Mhz IC= 50mA, VCE= 10V

f = 100MHz

10 pF VCB= 10V, f = 1MHz

*Measured under pulsed conditions. Pulse width = 300␮s. Duty Cycle <2%

SEMICONDUCTORS

2

ISSUE 2 - AUGUST 2003