Diodes FMMT455 User Manual
SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* 140 Volt V
* 1 Amp continuous current
*P
tot
PARTMARKING DETAIL 455
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
CEO
= 500 mW
=25°C P
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
FMMT455
C
SOT23
160 V
140 V
5V
2A
1A
200 mA
500 mW
-55 to +150 °C
E
B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance C
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
EBO
V
CE(sat)
h
FE
f
T
obo
* Measured under pulsed conditions. Pulse width=300
160 V
I
=100µA
C
140 V IC=10mA*
5V
0.1
0.1
µA
µA
I
=100µA
E
=140V
V
CB
=4V
V
EB
0.7 V IC=150mA, IB=15mA
100
10 Typ
300 IC=150mA, VCE=10V*
=1A, VCE=10V*
I
C
100 MHz IC=50mA, VCE=10V
f=100MHz
15 pF VCB=10V, f=1MHz
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 1103 - 111
FMMT455
TYPICAL CHARACTERISTICS
0.4
)
0.3
ts
ol
(V
-
0.2
0.1
V
0
100
%)
80
n (
ai
G
60
sed
i
40
al
m
Nor
20
-
h
0.001
IC/IB=10
0.001
IC-
0.01
Collector Current (Amps)
CE(sat)
V
VCE=10V
0.01
v IC
0.1
1
100.1 1
tf
ns
900
tr
ns
500
800
400
700
e
tim
300
600
ng
chi
t
200
500
i
w
S
100
400
0
300
ts
td
0.01
Collector Current (Amps)
IC-
tf
IB1=IB2=IC/10
VCE=10V
0.1
ts
µS
7
6
5
tr
4
td
nS
3
100
2
50
1
0
0
1
Typical Switching Speeds
1.0
0.8
)
ts
ol
(V
0.6
-
0.4
V
0.2
0.001
IC/IB=10
0.01
0.1
1
IC- Collector Current (Amps) IC- Collector Current (Amps)
hFEv IC V
BE(sat)
v IC
10
1.2
0.0001
VCE=10V
0.001
0.01 0.1
0.1
0.01
1
0.001
1.0
olts)
(V
0.8
-
V
0.6
0.4
IC- Collector Current (Amps)
BE(on)
V
v IC
Single Pulse T est at T
1
DC
1s
100ms
10ms
1ms
µ
s
100
1100.1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
amb
=25°C
100
1000
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