Diodes FMMT451 User Manual
SOT23 NPN SILICON PLANAR
HIGH PERFROMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* Low equivalent on-resistance; R
* 1 Amp continuous current
= 500 mW
*P
tot
COMPLEMENTARY TYPE FMMT551
PARTMARKING DETAIL 451
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
obo
400mΩ at 1A
CE(sat)
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
amb
80 V
60 V IC=10mA*
5V
0.1
0.1
µA
µA
0.35 V IC=150mA, IB=15mA*
1.1 V IC=150mA, IB=15mA*
50
150 IC=150mA, VCE=10V*
10
150 MHz IC=50mA, VCE=10V
15 pF VCB=10V, f=1MHz
µs. Duty cycle ≤ 2%
FMMT451
C
80 V
60 V
5V
2A
1A
200 mA
500 mW
-55 to +150 °C
I
=100µA
C
I
=100µA
E
=60V
V
CB
=4V
V
EB
=1A, VCE=10V*
I
C
f=100MHz
E
B
TYPICAL CHARACTERISTICS
FMMT451
tf,tr,td
e
m
i
g t
n
i
tch
i
w
S
)
ts
ol
V
(
-
V
ns
150
tf
100
tr
td
50
ts
0
0.01
0.1
IC- Collector Current (Amps)
Switching Speeds
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IC/IB=10
0.001
0.01 0.1
Collector Current (Amps)
IC-
0.8
0.001
IC/IB=10
0.01
0.1 1
10
)
0.6
ts
ol
V
(
-
0.4
0.2
V
0
IC- Collector Current (Amps)
VCE(sat) v IC
200
160
120
h
80
40
0
0.001
Collector Current (Amps)
IC-
VCE=2V
0.01 0.1
1
10
IB1=IB2=IC/10
VCE=10V
tf
tr
td
1
ts
ns
800
600
400
200
ts
0
1
10
hFE v IC VBE(sat) v IC
)
ts
ol
(V
-
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
0.4
0.2
0.001
VCE=2V
0.01 0.1
1
10
10
1
0.1
0.01
IC- Collector Current (Amps)
VBE(on) v IC
Single Pulse T est at Ta mb=25°C
DC
1s
100ms
10ms
1ms
s
100
µ
1100.1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
100
3 - 109 3 - 108
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