Diodes FMMT449 User Manual

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995

FEATURES
* Low equivalent on-resistance; R

COMPLEMENTARY TYPE  FMMT549
PARTMARKING DETAIL  449

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at T

= 25°C P

amb

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off
Current

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer Ratio

Transition
Frequency

Output Capacitance C

*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

obo

250mΩ at 1A

CE(sat)

CBO

CEO

EBO

CM

C

B

tot

j:Tstg

= 25°C unless otherwise stated).

amb

50 V IC=1mA, IE=0

30 V IC=10mA, IB=0*

5V

0.1
10

0.1

0.5

1.0

µA
µA

µA

V
V

1.25 V IC=1A, IB=100mA*

1.0 V IC=1A, VCE=2V*

70
100

300
80
40

150 MHz IC=50mA, VCE=10V

15 pF VCB=10V, f=1MHz

µs. Duty cycle ≤2%

3 - 106

FMMT449

C

50 V

30 V

5V

2A

1A

200 mA

500 mW

-55 to +150 °C

I

=100µA, I

E

=40V, IE=0

V

CB

=40V, T

V

CB

=4V, IC=0

V

EB

IC=1A, IB=100mA*

=2A, IB=200mA*

I

C

=50mA, VCE=2V*

I

C

=500mA, VCE=2V*

I

C

=1A, VCE=2V*

I

C

=2A, VCE=2V*

I

C

f=100mHz

=0

C

amb

=100°C

E

B

TYPICAL CHARACTERISTICS

FMMT449

tf,tr,td

0.8

0.001

IC/IB=10

0.01

0.1 1

10

)

0.6

ts
ol

(V

-

0.4

0.2

V

0

IC- Collector Current (Amps)

CE(sat)

V

200

160

120

h

80

40

0

0.001

Collector Current (Amps)

IC-

v IC

VCE=2V

0.01 0.1

1

10

hFEv IC V

ns

150

tf

e

100

m

ng ti
chi

t
wi

S

tr

td

50

ts

0

0.01

0.1

IC- Collect or Current (Amps)

Switching Speeds

1.8

1.6

1.4

1.2

)
ts

1.0

0.8

- (Vol

0.6

0.4

V

0.2

IC/IB=10

0.001

0.01 0.1

Collector Current (Amps)

IC-

BE(sat)

v IC

IB1=IB2=IC/10

VCE=10V

tf

tr

td

1

ts
ns

800

600

400

200

ts

0

1

10

1.8

1.6

1.4

)

1.2

ts
ol

V

1.0

(

-

0.8

0.6

V

0.4

0.2

0.001

VCE=2V

0.01 0.1

1

10

IC- Collector Current (Amps)

BE(on)

V

v IC

10

1

DC

1s

100ms

0.1

10ms

1ms

-Collector Current (A)

C

I

100µs

0.01

0.1

1

VCE- Collector Emitter Voltage (V

10 100

)

Safe Operating Area

3 - 107