Diodes FMMT38C User Manual
SOT23 NPN SILICON PLANAR MEDIUM
FMMT38A /B Not Recommended for
New Design Please Use FMMT38C
POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996
FMMT38A
FMMT38B
FMMT38C
FEATURES
* 60 Volt V
CEO
* Gain of 10K at IC=0.5 Amp
C
PARTMARKING DETAILS – FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
CM
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static
FMMT38A h
Forward
Current
Transfer
FMMT38B 2000
Ratio
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
FE
80 V
60 V IC=10mA, IB=0
10 V
100 nA VCB=60V, IE=0
100 nA VEB=8V, IC=0
1.25 V IC=800mA, IB=8mA*
1.8 V IC=800mA, VCE=5V*
500
1000
4000
FMMT38C 5000
10000
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
Spice parameter data is available upon request for this device
80 V
60 V
10 V
800 mA
300 mA
330 mW
-55 to +150 °C
I
=10A, IE=0
C
I
=10A, IC=0
E
IC=100mA, VCE=5V*
I
=500mA, VCE=5V*
C
I
=100mA, VCE=5V*
C
I
=500mA, VCE=5V*
C
I
=100mA, VCE=5V*
C
I
=500mA, VCE=5V*
C
E
B
TYPICAL CHARACTERISTICS
FMMT38A /B Not Recommended for
New Design Please Use FMMT38C
FMMT38A
FMMT38B
FMMT38C
1.0
)
s
t
l
o
V
(
-
)
t
a
s
(
E
C
V
)
s
t
l
o
V
(
-
)
t
a
s
(
E
B
V
Thermal Resistance (°C/W)
-55°C
0.8
+25°C
0.6
+100°C
0.4
+175°C
0.2
0.001 0.01 0.1 1
Collector Current (Amps)
IC -
CE(sat)
V
2.0
-55°C
1.5
+25°C
+100°C
1.0
+175°C
0.5
0.001 0.01 0.1 1 10
150
100
50
0
0.0001
Collector Current (Amps)
IC -
D=1 (D.C.)
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
BE(sat)
V
v IC
v IC
Pulse Width (seconds)
Maximum transient thermal impedance
IC/IB=100
IC/IB=100
10 10010.10.010.001
1.6
+100°C
1.4
n
i
a
1.2
G
d
1.0
e
s
+25°C
i
l
0.8
a
m
r
0.6
o
N
-
0.4
E
F
h
10
-55°C
0.2
0
0.001 0.01
0.1 1
Collector Current (Amps)
IC -
VCE=5V
10
hFEv IC
VCE=5V
2.0
)
s
t
l
o
V
(
-
E
B
V
100m
IC - Collector Current (A)
-55°C
1.5
+25°C
1.0
+100°C
+175°C
0.5
0.001 0.01 0.1 1 10
Collector Current (Amps)
IC -
BE(on)
V
v IC
1
DC
1s
100ms
10m
1m
100m
10ms
1ms
100us
1 10 100
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 101 3 - 100
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