Page 1
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 3 - OCTOBER 2005
FEATURES
* 2W POWER DISSIPATION
* 6A Peak Pulse Current
*Excellent H
* Low Saturation Volta g es
Characteristics
FE
FCX790A
C
Partmarking Det a il - 790
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other supplie r s .
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
CBO
CEO
EBO
CM
C
tot
j:Tstg
-50 V
-40 V
-5 V
-6 A
-2 A
1 †
2 ‡
-55 to +150 °C
W
W
E
Page 2
FCX790A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
-50 V
=-100µA
I
C
-40 V IC=-10mA*
-5 V
-0.1
-0.1
-250
-350
-450
µA
µA
mV
mV
mV
=-100µA
I
E
VCB=-30V
VEB=-4V
IC=-0.5A, IB=-5mA*
=-1A, IB=-10mA*
I
C
I
=-2A, IB=-50mA*
C
-0.9 V IC=-1A, IB=-10mA*
-0.8 V IC=-1A, VCE=-2V*
300
250
200
150
800 IC=-10mA, VCE=-2V
I
=-500mA, VCE=-2V*
C
=-1A, VCE=-2V*
I
C
I
=-2A, VCE=-2V*
C
100 MHz IC=-50mA, VCE=-5V
f=50MHz
225 pF VEB=-0.5V, f=1MHz
24 pF VCB=-10V, f=1MHz
35
600
ns
IC=-500mA, IB1=-50mA
ns
I
=-50mA, VCC=-10V
B2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Page 3
TYPICAL CHARACTERISTICS
FCX790A
1.8
1.6
1.4
1.2
olts)
1.0
- (V
)
0.8
at
(s
E
0.6
C
V
0.4
0.2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
- Normalised Gain
0.2
E
F
h
0
olts)
- (V
E
B
V
+100°C
+25°C
-55°C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
IC -
olts)
- (V
)
t
sa
(
CE
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
IC/IB=100
IC/IB=40
IC/IB=10
0.01 0.1 1 10
T
=25°C
amb
IC - Collector Current (Amps)
CE(sat)
V
0.01 0.1
Collector Current (Amps)
IC -
v IC
1
VCE=2V
olts)
(V
-
)
t
a
(s
BE
V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
750
500
cal Gain
i
yp
- T
E
250
F
h
10
hFEv IC V
10
-55°C
+25°C
+100°C
0.01 0.1 1 10
Collector Current (Amps)
BE(on)
V
v IC
VCE=2V
1
0.1
- Collector Current (Amps)
C
I
0.01
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
IC/IB=100
IC - Collector Current (Amps)
CE(sat)
V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 1 10
Collector Current (Amps)
IC -
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1 100 1 10
CE
Collector Voltage (Volts)
V
-
BE(sat)
v IC
v IC
IC/IB=100
=25°C
amb
Safe Operating Area
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