Diodes FCX718 User Manual
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 6A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 16mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
Partmarking Detail - 718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
Characteristics up to 6Amps
FE
96mΩ at 2.5A
CBO
CEO
EBO
CM
C
B
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX718
C
C
B
-20 V
-20 V
-5 V
-6 A
-2.5 A
-500 mA
1 †
2 ‡
-55 to +150 °C
W
W
E
FCX718
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
(on)
(off)
-20 -65 V
I
=-100µA
C
-20 -55 V IC=-10mA*
-5 -8.8 V
I
=-100µA
E
-100 nA VCB=-15V
-100 nA VEB=-4V
-16
-130
-145
-100 nA V
-40
mV
-200
mV
-220
mV
-300
mV
=-15V
CES
IC=-0.1A, IB=-10mA*
=-1A, IB=-20mA*
I
C
I
=-1.5A, IB=-50mA*
C
I
=-2.5A, IB=-200mA*
C
-0.98 -1.1 V IC=-2.5A, IB=-200mA*
-0.85 -0.95 V IC=-2.5A, VCE=-2V*
300
300
150
35
15
475
450
230
70
30
IC=-10mA, VCE=-2V*
I
=-0.1A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
=-4A, VCE=-2V*
I
C
I
=-6A, VCE=-2V*
C
150 180 MHz IC=-50mA, VCE=-10V
f=100MHz
21 30 pF VCB=-10V, f=1MHz
40 ns VCC=-15V, IC=-0.75A
I
=15mA
670 ns
B1=IB2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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