Diodes FCX717 User Manual
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - MAY 1999
FEATURES
* 2W POWER DISSIPATION
* 10A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 12mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
Partmarking Detail - 717
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
Characteristics up to 10 Amps
FE
77m at 3A
CBO
CEO
EBO
CM
C
B
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX717
-12 V
-12 V
-5 V
-10 A
-3 A
-500 mA
1†
2‡
-55 to +150 °C
W
W
FCX717
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
(on)
(off)
-12 -35 V
I
=-100µA
C
-12 -25 V IC=-10mA*
-5 -8.5 V
I
=-100µA
E
-100 nA VCB=-10V
-100 nA VEB=-4V
-12
-110
-230
-100 nA V
-20
mV
-150
mV
-320
mV
=-10V
CES
IC=-0.1A, IB=-10mA*
I
=-1A, IB=-10mA*
C
I
=-3A, IB=-50mA*
C
-0.92 -1.05 V IC=-3A, IB=-50mA*
-0.85 -1.0 V IC=-3A, VCE=-2V*
300
300
160
60
45
475
450
240
100
70
IC=-10mA, VCE=-2V*
I
=-0.1A, VCE=-2V*
C
I
=-3A, VCE=-2V*
C
I
=-8A, VCE=-2V*
C
I
=-10A, VCE=-2V*
C
80 110 MHz IC=-50mA, VCE=-10V
f=100MHz
21 30 pF VCB=-10V, f=1MHz
70 ns VCC=-6V, IC=-2A
I
=50mA
130 ns
B1=IB2
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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