Diodes FCX705 User Manual

120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

SUMMARY
V

=120V; V

CEO

DESCRIPTION

This new PNP Darlington transistor provides users with very efficient performance
combining low V
120V operation. This makes it deal for use in a variety of efficient driving functions
including motors, lamps relays and solenoids and will also benefit circuits
requiring high output current switching.

FEATURES

Low Saturation Voltage

•

HFEmin 3K @ -1A

•

IC= -2A Continuous

•

SOT89 package with Ptot - 1W

•

•

Specification is also available in Eline and SOT223
package outlines

= 1.3V; IC= -1A

CE(sat)

and very high HFEto give extremely low on state losses at

CE (sat)

FCX705

O

8

9

T

S

APPLICATIONS

•

Various driving functions

- Lamps

- Motors

- Relays and solenoids

•

High output current switches

ORDERING INFORMATION

DEVICE REEL

SIZE

FCX705TA 7’‘ 12mm 1000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

705

ISSUE 4 - DECEMBER 2002

Top View

1

SEMICONDUCTORS

FCX705

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT PNP UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at TA=25°C (a)

CBO

CEO

EBO

CM

C

P

D

Linear Derating Factor

Power Dissipation at TA=25°C (b)

P

D

Linear Derating Factor

Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

θJA

θJA

-140 V

-120 V

-10 V

-4 A

-1 A

1
8

2.8
22

W

mW/°C

W

mW/°C

-55 to +150 °C

125 °C/W

45 °C/W

SEMICONDUCTORS

ISSUE 4 - DECEMBER 2002

2

FCX705

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

-140 V IC= -100␮A

-120 V IC= -10mA*

-10 V IE= -100␮A

-100

-10nAµA

VCB= -10V

V

= -120V

CB

Tamb = 100°C

Emitter Cut-Off Current I

Collector Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-On Voltage V

Static Forward Current Transfer
Ratio

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

3K
3K
3K
2K

Transition Frequency f

Input Capacitance C

Output Capacitance C

Turn-On Time t

Turn-Off Time t

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Nb. Spice parameter data is available upon request for this device.

T

ibo

obo

(on)

(off)

160 MHz IC= -100mA, VCE= -10V

0.6 µs IC= -500mA, VCE= -10V

0.8 µs IC= -500mA, VCE= -10V

-0.1 µA VEB= -8V

-10 µA V

-1.3

-2.5VV

= -120V

CES

IC= -1A, IB= -1mA*
I

= -2A, IB= -2mA*

C

-1.8 V IC= -1A, IB= -1mA*

-1.7 V IC= -1A, VCE= -5V*

IC= -10mA, VCE= -5V*
I

= -100mA, VCE= -5V*

30K

C

I

= -1A, VCE= -5V*

C

I

= -2A, VCE= -5V*

C

f= 20MHz

90 pF VCB= -500mV, f= 1MHz

15 pF VCB= -10V, f= 1MHz

I

= -0.5mA

B1=IB2

I

= -0.5mA

B1=IB2

ISSUE 4 - DECEMBER 2002

3

SEMICONDUCTORS

FCX705

PNP CHARACTERISTICS

SEMICONDUCTORS

ISSUE 4 - DECEMBER 2002

4

FCX705

PACKAGE DIMENSIONS

A

H

K

D B

G

N

DIM

Millimetres Inches

Min Max Min Max

A 4.40 4.60 0.173 0.181

B 3.75 4.25 .150 0.167

C 1.40 1.60 0.550 0.630

D - 2.60 - 0.102

F 0.28 0.45 0.011 0.018

G 0.38 0.55 0.015 0.022

H 1.50 1.80 0.060 0.072

K 2.60 2.85 0.102 0.112

L 2.90 3.10 0.114 0.112

N 1.4 1.60 0.055 0.063

C

PAD LAYOUT DETAILS

F

© Zetex plc 2003

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ISSUE 4 - DECEMBER 2002

5

SEMICONDUCTORS