Diodes FCX705 User Manual

120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

SUMMARY
V

=120V; V

CEO

DESCRIPTION

This new PNP Darlington transistor provides users with very efficient performance
combining low V
120V operation. This makes it deal for use in a variety of efficient driving functions
including motors, lamps relays and solenoids and will also benefit circuits
requiring high output current switching.

FEATURES

Low Saturation Voltage

•

HFEmin 3K @ -1A

•

IC= -2A Continuous

•

SOT89 package with Ptot - 1W

•

•

Specification is also available in Eline and SOT223
package outlines

= 1.3V; IC= -1A

CE(sat)

and very high HFEto give extremely low on state losses at

CE (sat)

FCX705

O

8

9

T

S

APPLICATIONS

•

Various driving functions

- Lamps

- Motors

- Relays and solenoids

•

High output current switches

ORDERING INFORMATION

DEVICE REEL

SIZE

FCX705TA 7’‘ 12mm 1000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

705

ISSUE 4 - DECEMBER 2002

Top View

1

SEMICONDUCTORS

FCX705

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT PNP UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at TA=25°C (a)

CBO

CEO

EBO

CM

C

P

D

Linear Derating Factor

Power Dissipation at TA=25°C (b)

P

D

Linear Derating Factor

Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

θJA

θJA

-140 V

-120 V

-10 V

-4 A

-1 A

1
8

2.8
22

W

mW/°C

W

mW/°C

-55 to +150 °C

125 °C/W

45 °C/W

SEMICONDUCTORS

ISSUE 4 - DECEMBER 2002

2