Diodes FCX688B User Manual
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 10A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage
Characteristics up to 10 Amps
FE
FCX688B
C
Complimentary Type - FCX789A
Partmarking Detail - 688
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
CBO
CEO
EBO
CM
C
tot
j:Tstg
12 V
12 V
5V
10 A
3A
1 †
2 ‡
-55 to +150 °C
W
W
E
FCX688B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer
Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
12 V
I
=100µA
C
12 V IC=10mA*
5V
0.1
0.1
40
60
180
350
400
µA
µA
mV
mV
mV
mV
mV
1.1 V
I
=100µA
E
VCB=9V
VEB=4V
I
=0.1A, IB=1mA *
C
I
=0.1A, IB=0.5mA *
C
I
=1A, IB=10mA *
C
I
=3A, IB=10mA *
C
I
=4A, IB=50mA *
C
=3A, IB=20mA *
I
C
1.0 V IC=3A, VCE=2V *
500
400
100
IC=100mA, VCE=2V*
=3A, VCE=2V*
I
C
I
=10A, VCE=2V*
C
150 MHz IC=50mA, VCE=5V
f=50MHz
200 pF VEB=0.5V, f=1MHz
40 pF VCB=10V, f=1MHz
40
500
ns
ns
IC=500mA, IB1=IB2=50mA
V
=10V
CC
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
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