SOT89 NPN SILICON PLANAR
MEDIUM POWER HIGH VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 2000
FEATURES
* 400 Volt V
* 0.5 Amp continuous current
*P
tot
* Optimised h
APPLICATIONS
* Telephone dialler circuits
* Hook switches for modems
* Predrivers within HID lamp ballasts
* (SLIC) Subscriber Line Interface Cards
Partmarking Detail - 65A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
=1 Watt
CEO
characterised upto 200mA
fe
=25°C
amb
derate above 25°C
CM
C
P
CBO
CEO
EBO
tot
j:Tstg
FCX658A
C
C
B
SOT89
400 V
400 V
5V
1A
500 mA
1
5.7
-55 to +150 °C
mW/ °C
E
W
FCX658A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
Switching times t
V
(BR)CBO
V
(BR)CEO)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
on
t
off
400 480 V
I
=100µA
C
400 465 V IC=10mA*
57.8 V
I
=100µA
E
100 nA VCB=320V
100 nA VCE=320V
100 nA VEB=4V
0.165
V
0.125
0.2
IC=20mA, IB=1mA
V
I
V
C
I
C
I
B
=50mA, IB=5mA*
=100mA,
=10mA*
0.75 0.85 V IC=100mA,
I
=10mA*
B
0.70 0.85 V IC=100mA, VCE=5V*
85
100
55
35
150
170
130
90
IC=1mA, VCE=5V*
I
=10mA, VCE=10V*
C
I
=100mA, VCE=5V*
C
I
=200mA, VCE=10V*
C
50 MHz IC=20mA, VCE=20V
f=20MHz
10 pF VCB=20V, f=1MHz
130
3300
nsnsIC=100mA, VC=100V
I
=10mA,
B1
I
=-20mA
B2
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
NB
For high voltage applications the appropriate industry sector PCB guidelines should be
considered with regard to voltage spacing between conductors.