Diodes FCX591A User Manual

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Diodes Incorporated
40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
Features
BV
Maximum Continuous Current I
Low saturation voltage V
Complementary NPN type: FCX491A
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
CEO
> -40V
= -1A
C
< -500mV @ -1A
CE(sat)
Mechanical Data
Case: SOT89
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
Application
Power MOSFET & IGBT gate driving
Low loss power switching
SOT89
Top View
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E
Device Symbol
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Top View
Pin Out
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FCX591ATA P2 7 12 1,000
FCX591A-13R P2 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
4. For packaging details, go to our website at http://www.diodes.com.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
Marking Information
FCX591A
tasheet Number: DS33062 Rev. 6 - 2
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P2
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P2 = Product Type Marking Code
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Maximum Ratings (@T
= +25°C, unless otherwise specified.)
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Characteristic Symbol Limit Unit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Peak Base Current
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
-40 V
-40 V
-7 V
-1 A
-2 A
-200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Thermal Resistance, Junction to Leads (Note 6) Operating and Storage Temperature Range
P R R
T
J,TSTG
θJA θJL
D
1 W
125
10.01
-65 to +150
°C/W °C/W
°C
ESD Ratings (Note 7)
Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Characteristic Symbol Value Unit JEDEC Class
FCX591A
tasheet Number: DS33062 Rev. 6 - 2
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Thermal Characteristics and Derating Information
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1.0
0.8
0.6
0.4
0.2
0.0 0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derat in g Curve
100
Single Pulse. T
10
amb
=25°C
120 100
80
D=0.5
60 40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipatio n (W)
Pulse Width (s)
Pulse Power Dissipation
FCX591A
tasheet Number: DS33062 Rev. 6 - 2
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