Diodes FCX589 User Manual
SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
FCX589
PARTMARKING DETAIL – P89
C
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse C urren t I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERI STIC S (at T
amb
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Current I
Collector -Emitter Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current Transfer
Ratio
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-50 V
-30 V IC=-10mA*
-5 V
-100 nA VCB=-30V
-100 nA V
-100 nA VEB=-4V
-0.35
-0.65
-1.2 V IC=-1A, IB=-100mA*
-1.1 V IC=-1A, VCE=-2V*
100
100
300
80
40
Transition Frequency f
Output Capacitance C
T
obo
100 MHz IC=-100mA, VCE=-5V
15 pF VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT549 datasheet
-50 V
-30 V
-5 V
-2 A
-1 A
-200 mA
1W
-65 to +150 °C
VI
B
I
=-100µA
C
I
=-100µA
E
=-30V
CES
=-1A, IB=-100mA*
C
I
=-2A, IB=-200mA*
C
IC=-1mA, VCE=-2V*
I
=-500mA, VCE=-2V*
C
I
=-1A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
f=100MHz
E
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