Diodes FCX558 User Manual
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400V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT89
Features
• BV
• I
• Low saturation voltage V
• Complementary NPN type: FCX458
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
> -400V
CEO
= -200mA high Continuous Current
C
< -200mV @ -20mA
CE(sat)
SOT89
Top View
Mechanical Data
• Case: SOT89
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.05 grams (Approximate)
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Device Symbol
Diodes Incorporated
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Top View
Pin Out
FCX558
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Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FCX558TA P58 7 12 1,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
4. For packaging details, go to our website at http://www.diodes.com.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
Marking Information
P58
P58 = Product Type Marking Code
FCX558
tasheet Number: DS33059 Rev. 4 - 2
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www.diodes.com
November 2012
© Diodes Incorporated
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Diodes Incorporated
FCX558
Maximum Ratings (@T
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
= +25°C, unless otherwise specified.)
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Characteristic Symbol Limit Unit
V
CBO
V
CEO
V
EBO
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C
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CM
-400 V
-400 V
-7 V
-200 mA
-500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes: 5. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
P
R
R
T
J,TSTG
θJA
θJL
D
1 W
125
10.01
-65 to +150
°C/W
°C/W
°C
Thermal Characteristics and Derating Information
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150
Max Power Dissipation (W)
Temperature (°C)
Derating Curve
120
100
80
D=0.5
60
40
D=0.2
20
0
100µ 1m 10m 100m 1 10 100 1k
Thermal Resistance (°C/W)
Pulse Width (s)
Single Pulse
D=0.05
D=0.1
Transient Thermal Impedance
100
Single Pulse. T
10
1
100µ 1m 10m 100m 1 10 100 1k
Max Power Dissipation (W)
Pulse Width (s)
amb
=25°C
Pulse Power D is s ip a t io n
FCX558
tasheet Number: DS33059 Rev. 4 - 2
Da
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
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