Diodes FCX458 User Manual
SOT89 NPN SILICON PLANAR
C
B
C
E
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
* 400 Volt V
*P
tot
COMPLEMENTARY TYPE – FCX558
PARTMARKING DETAIL – N58
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse C urren t I
Power Dissipation at T
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERI STIC S (at T
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Collector Cut-Off Currents I
Emitter Cut-Off Current I
Emitter Saturation Voltages V
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Collector-Base
Breakdown Voltage
Switching times t
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
= 1 Watt
CEO
=25°C P
amb
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
I
CES
EBO
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
C
obo
on
t
off
CBO
CEO
EBO
C
CM
tot
j:Tstg
= 25°C).
amb
400 V
400 V IC=10mA*
5V
100 nA VCB=320V
100 nA VCE=320V
100 nA VEB=4V
0.2
0.5
V
V
0.9 V IC=50mA, IB=5mA*
0.9 V IC=50mA, VCE=10V*
100
100
300
15
50 MHz IC=10mA, VCE=20V
5pFV
135 Typical
2260 Typical
ns
ns
3 - 85
FCX458
400 V
400 V
5V
225 mA
500 mA
1W
-65 to +150 °C
I
=100µA
C
I
=100µA
E
IC=20mA, IB=2mA*
I
=50mA, IB=6mA*
C
IC=1mA, VCE=10V
I
=50mA, VCE=10V*
C
I
=100mA, VCE=10V**
C
f=20MHz
=20V, f=1MHz
CB
IC=50mA, VC=100V
I
=5mA, IB2=-10mA
B1
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