Diodes FCX1151A User Manual
SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 5A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 60mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
Complimentary Type - FCX1051A
Partmarking Detail - 151
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
Characteristics up to 5 Amps
FE
66mΩ at 3A
CBO
CEO
EBO
CM
C
B
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX1151A
C
C
B
-45 V
-40 V
-5 V
-5 A
-3 A
-500 mA
1 †
2 ‡
-55 to +150 °C
W
W
E
FCX1151A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
cb
on
t
off
-45 V
-40 V
I
=-100µA
C
I
=-100µA
C
-40 V IC=-10mA
-40 V
-5 V
I
=-100µA, V
C
=-100µA
I
E
-0.3 -100 nA VCB=-36V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA VCE=-32V
-60
-120
-140
-200
-90
-180
-220
-300
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
I
=-0.5A, IB=-5mA*
C
I
=-1A, IB=-20mA*
C
I
=-3A, IB=-250mA*
C
-985 -1050 mV IC=-3A, IB=-250mA*
-850 -950 mV IC=-3A, VCE=-2V*
270
250
180
100
450
400
300
190
45
800
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-3A, VCE=-2V*
C
I
=-5A, VCE=-2V*
C
145 MHz IC=-50mA, VCE=-10V
f=50MHz
40 pF VCB=-10V, f=1MHz
170 ns IC=-2A, IB=-20mA,
V
=-30V
CC
460 ns
I
=-2A, I
C
V
CC
=-30V
=±20mA,
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
EB
=+1V
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