Diodes FCX1149A User Manual

SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR

ISSSUE 1 - SEPTEMBER 1999

FEATURES

* 2W POWER DISSIPATION

* 20A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 45mv Typ.
* Extremely Low Equivalent On-resistance;

R

CE(sat)

Partmarking Detail - 149

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current ** I

Continuous Collector Current I

Base Current I

Power Dissipation at T

Operating and Storage Temperature Range T

† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.
**Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.

Characteristics up to 10 Amps

FE

67mat 3A

CBO

CEO

EBO

CM

C

B

=25°C P

amb

calculated using FR4 measuring 15x15x0.6mm

tot

tot

j:Tstg



s. Duty cycle  2%

FCX1149A

C

C

B

-30 V

-25 V

-5 V

-10 A

-3 A

-500 mA

1 †
2 ‡

-55 to +150 °C

W
W

E

FCX1149A

ELECTRICAL CHARACTERISTICS (at T

amb

VALU E

PARAMETER SYMBOL

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

V

(BR)CBO

V

(BR)CES

V

(BR)CEO

V

(BR)CEV

V

(BR)EBO

CBO

EBO

I

CES

V

CE(sat)

MIN. TYP. MAX.

-30 V

-25 V

-25 V IC=-10mA*

-25 V

-5 V

-0.3 -100 nA VCB=-24V

-0.3 -100 nA VEB=-4V

-0.3 -100 nA V

-45

-100

-140

-200

-230

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer Ratio

V

BE(sat)

V

BE(on)

h

FE

270
250
150
115

-930 -1050 mV IC=-3A, IB=-100mA*

-840 -1000 mV IC=-3A, VCE=-2V*

450
400
260
190
50

Transition Frequency f

Output Capacitance C

Switching Times t

T

cb

on

t

off

135 MHz IC=-50mA, VCE=-10V

50 pF VCB=-10V, f=1MHz

150 ns IC=-4A, IB=-40mA,

270 ns

*Measured under pulsed conditions. Pulse width=300

= 25°C unless otherwise stated).

UNIT CONDITIONS.

=-100A

I

C

=-100A

I

C

=-100A, VEB=+1V

I

C

=-100A

I

E

=-20V

CES

-80

-170

-240

-300

-350

800



s. Duty cycle  2%

mV
mV
mV
mV
mV

IC=-0.1A, IB=-1mA*
I

=-0.5A, IB=-3mA*

C

I

=-1A, IB=-7mA*

C

I

=-3A, IB=-100mA*

C

I

=-4A, IB=-140mA*

C

IC=-10mA, VCE=-2V*
I

=-0.5A, VCE=-2V*

C

I

=-3.0A, VCE=-2V*

C

I

=-5.0A, VCE=-2V*

C

I

=-10.0A, VCE=-2V*

C

f=50MHz

V

=-10V

CC

=-4A, IB=40mA,

I

C

V

=-10V

CC