SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - SEPTEMBER 1999
FEATURES
* 2W POWER DISSIPATION
* 20A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 45mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
Partmarking Detail - 149
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
Characteristics up to 10 Amps
FE
67mat 3A
CBO
CEO
EBO
CM
C
B
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
s. Duty cycle 2%
FCX1149A
C
C
B
-30 V
-25 V
-5 V
-10 A
-3 A
-500 mA
1 †
2 ‡
-55 to +150 °C
W
W
E
FCX1149A
ELECTRICAL CHARACTERISTICS (at T
amb
VALU E
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
MIN. TYP. MAX.
-30 V
-25 V
-25 V IC=-10mA*
-25 V
-5 V
-0.3 -100 nA VCB=-24V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA V
-45
-100
-140
-200
-230
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
270
250
150
115
-930 -1050 mV IC=-3A, IB=-100mA*
-840 -1000 mV IC=-3A, VCE=-2V*
450
400
260
190
50
Transition Frequency f
Output Capacitance C
Switching Times t
T
cb
on
t
off
135 MHz IC=-50mA, VCE=-10V
50 pF VCB=-10V, f=1MHz
150 ns IC=-4A, IB=-40mA,
270 ns
*Measured under pulsed conditions. Pulse width=300
= 25°C unless otherwise stated).
UNIT CONDITIONS.
=-100A
I
C
=-100A
I
C
=-100A, VEB=+1V
I
C
=-100A
I
E
=-20V
CES
-80
-170
-240
-300
-350
800
s. Duty cycle 2%
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1mA*
I
=-0.5A, IB=-3mA*
C
I
=-1A, IB=-7mA*
C
I
=-3A, IB=-100mA*
C
I
=-4A, IB=-140mA*
C
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-3.0A, VCE=-2V*
C
I
=-5.0A, VCE=-2V*
C
I
=-10.0A, VCE=-2V*
C
f=50MHz
V
=-10V
CC
=-4A, IB=40mA,
I
C
V
=-10V
CC
TYPICAL CHARACTERISTICS
FCX1149A
1.0
+25°C
0.8
0.6
- (V)
0.4
CE(sat)
V
0.2
0
1m 100
IC/IB=10
IC/IB=50
IC/IB=100
IC/IB=200
10m 100m 1 10
IC- Collector Current (A)
V
750
VCE=2V
500
- Typical Gain
250
FE
h
0
1m 100
10m 100m 1 10
CE(sat)
v I
C
IC- Collector Current (A)
hFEv I
C
1.2
VCE=2V
+100°C
+25°C
-55°C
1.0
IC/IB=100
0.8
0.6
- (V)
0.4
CE(sat)
V
0.2
0
1m 100
-55°C
+25°C
+100°C
10m 100m 1 10
IC- Collector Current (A)
V
1.6
IC/IB=100
1.2
- (V)
0.8
BE(sat)
V
0.4
0
10m 100m 1 10
CE(sat)
v I
IC- Collector Current (A)
V
10
BE(sat)
v I
C
-55°C
+25°C
+100°C
1001m
C
0.8
- (V)
BE(on)
0.4
V
0
1m 100 100m 100
10m 100m 1 10
-55°C
+25°C
+100°C
IC- Collector Current (A)
V
v I
BE(on)
C
- Collector Current (A)
C
I
1
100m
10m
DC
1s
100ms
10ms
1ms
100us
110
VCE- Collector Emitter Voltage (V)
Safe Operating Area
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