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SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - DECEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 20A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 25mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
Complimentary Type - FCX1047A
Partmarking Detail - 147
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.
Characteristics up to 20 Amps
FE
53mΩ at 3A
CBO
CEO
EBO
CM
C
B
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX1147A
C
C
B
-15 V
-12 V
-5 V
-20 A
-3 A
-500 mA
1 †
2 ‡
-55 to +150 °C
W
W
E
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FCX1147A
ELECTRICAL CHARACTERISTICS (at T
(BR)CBO
(BR)CES
(BR)CEO
(BR)CEV
(BR)EBO
CE(sat)
BE(sat)
BE(on)
FE
VALUE
MIN. TYP. MAX.
-15 V
-12 V
-12 V IC=-10mA
-12 V
-5 V
270
250
200
200
150
90
PARAMETER SYMBOL
Collector-Base
V
Breakdown Voltage
Collector-Emitter
V
Breakdown Voltage
Collector-Emitter
V
Breakdown Voltage
Collector-Emitter
V
Breakdown Voltage
Emitter-Base
V
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
CBO
EBO
I
CES
V
Saturation Voltage
Base-Emitter
V
Saturation Voltage
Base-Emitter Turn-On
V
Voltage
Static Forward Current
h
Transfer Ratio
= 25°C unless otherwise stated).
amb
UNIT CONDITIONS.
-0.3 -10 nA VCB=-12V
-0.3 -10 nA VEB=-4V
-0.3 -10 nA V
-25
-70
-90
-115
-160
-250
-50
-110
-130
-170
-250
-400
mV
mV
mV
mV
mV
-820 -1000 mV IC=-3A, IB=-30mA*
-770 -950 mV IC=-3A, VCE=-2V*
450
400
850
340
300
245
145
50
Transition Frequency f
Output Capacitance C
Switching Times t
T
cb
on
t
off
115 MHz IC=-50mA, VCE=-10V
80 pF VCB=-10V, f=1MHz
150 ns IC=-4A, IB=-40mA,
220 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
=-100µA
I
C
=-100µA
I
C
I
=-100µA, V
C
I
=-100µA
E
=-10V
CES
I
=-0.1A, IB=-1mA*
C
I
=-0.5A, IB=-2.5mA*
C
I
=-1A, IB=-6mA*
C
I
=-2A, IB=-20mA*
C
I
=-3A, IB=-30mA*
C
I
=-5A, IB=-50mA*
C
EB
=+1V
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-2.0A, VCE=-2V*
C
I
=-3.0A, VCE=-2V*
C
I
=-5.0A, VCE=-2V*
C
I
=-10.0A, VCE=-2V*
C
I
=-20.0A, VCE=-2V*
C
f=50MHz
V
=-10V
CC
I
=-4A, I
=−40mA,
C
B
V
=-10V
CC
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TYPICAL CHARACTERISTICS
FCX1147A
+25°C
2.0
1.6
1.2
0.8
0.4
0
1m 100
10m 100m 1
IC- Collector Current (A)
600
400
200
0
V
CE(sat)
IC/IB=50
IC/IB=100
IC/IB=200
v I
10
C
+100 C
+25 C
-55 C
IC - Collector Current (A)
hFEv I
C
1.2
VCE=2V
1.0
0.8
0.6
0.4
0.2
0
IC - Collector Current (A)
VBE(on) v IC
VCE=2V
-55°C
+25°C
+100°C
+175°C
100101100m10m1m
100101100m10m1m
100
2.0
IC/IB=100
1.6
1.2
0.8
0.4
0
-55°C
+25°C
+100°C
+150°C
IC- Collector Current (A)
V
CE(sat)
1.2
IC/IB=100
1.0
0.8
0.6
0.4
0.2
0
IC - Collector Current (A)
V
BE(sat)
100
10
DC
1s
1
100ms
10ms
1ms
100µs
0.1
100m 10
VCE - Collector Emitter Voltage (V)
1
Safe Operating Area
v I
v I
C
+100°C
+150°C
C
-55°C
+25°C
100101100m10m1m
100101100m10m1m
100
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