Diodes FCX1147A User Manual

SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR

ISSSUE 1 - DECEMBER 1998

FEATURES

* 2W POWER DISSIPATION

* 20A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 25mv Typ.
* Extremely Low Equivalent On-resistance;

R

CE(sat)

Complimentary Type - FCX1047A
Partmarking Detail - 147

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current ** I

Continuous Collector Current I

Base Current I

Power Dissipation at T

Operating and Storage Temperature Range T

† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices.
Refer to the handling instructions for soldering surface mount components.

Characteristics up to 20 Amps

FE

53mΩ at 3A

CBO

CEO

EBO

CM

C

B

=25°C P

amb

calculated using FR4 measuring 15x15x0.6mm

tot

tot

j:Tstg

FCX1147A

C

C

B

-15 V

-12 V

-5 V

-20 A

-3 A

-500 mA

1 †
2 ‡

-55 to +150 °C

W
W

E

FCX1147A

ELECTRICAL CHARACTERISTICS (at T

(BR)CBO

(BR)CES

(BR)CEO

(BR)CEV

(BR)EBO

CE(sat)

BE(sat)

BE(on)

FE

VALUE

MIN. TYP. MAX.

-15 V

-12 V

-12 V IC=-10mA

-12 V

-5 V

270
250
200
200
150
90

PARAMETER SYMBOL

Collector-Base

V

Breakdown Voltage

Collector-Emitter

V

Breakdown Voltage

Collector-Emitter

V

Breakdown Voltage

Collector-Emitter

V

Breakdown Voltage

Emitter-Base

V

Breakdown Voltage

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off
Current

Collector-Emitter

CBO

EBO

I

CES

V

Saturation Voltage

Base-Emitter

V

Saturation Voltage

Base-Emitter Turn-On

V

Voltage

Static Forward Current

h

Transfer Ratio

= 25°C unless otherwise stated).

amb

UNIT CONDITIONS.

-0.3 -10 nA VCB=-12V

-0.3 -10 nA VEB=-4V

-0.3 -10 nA V

-25

-70

-90

-115

-160

-250

-50

-110

-130

-170

-250

-400

mV
mV
mV
mV
mV

-820 -1000 mV IC=-3A, IB=-30mA*

-770 -950 mV IC=-3A, VCE=-2V*

450
400

850
340
300
245
145
50

Transition Frequency f

Output Capacitance C

Switching Times t

T

cb

on

t

off

115 MHz IC=-50mA, VCE=-10V

80 pF VCB=-10V, f=1MHz

150 ns IC=-4A, IB=-40mA,

220 ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

=-100µA

I

C

=-100µA

I

C

I

=-100µA, V

C

I

=-100µA

E

=-10V

CES

I

=-0.1A, IB=-1mA*

C

I

=-0.5A, IB=-2.5mA*

C

I

=-1A, IB=-6mA*

C

I

=-2A, IB=-20mA*

C

I

=-3A, IB=-30mA*

C

I

=-5A, IB=-50mA*

C

EB

=+1V

IC=-10mA, VCE=-2V*
I

=-0.5A, VCE=-2V*

C

I

=-2.0A, VCE=-2V*

C

I

=-3.0A, VCE=-2V*

C

I

=-5.0A, VCE=-2V*

C

I

=-10.0A, VCE=-2V*

C

I

=-20.0A, VCE=-2V*

C

f=50MHz

V

=-10V

CC

I

=-4A, I

=−40mA,

C

B

V

=-10V

CC