Diodes FCX1051A User Manual

FCX1051A

C

E

B

SOT89 NPN medium power transistor

Summary

BV

I

V

R

P

Complimentary type - FCX1151A

CEO

C(cont)

CE(sat)

CE(sat)

= 2W

D

> 40V

= 3A

< 120mV @ 1A

= 57m⍀

Description

An NPN low voltage, high gain bipolar transistor offering very low
saturation voltage and excellent current handling in the SOT89
package.

Features

• Very low saturation voltage

•High gain

• Small outline package

Applications

• Motor drive

•Strobe flash

E

• MOSFET and IGBT gate driving

• DC -DC converters

C

Ordering information

Device Reel size

(inches)

FCX1051ATA 7 12 1,000

Tape width

(mm)

Quantity

per reel

Pinout - top view

Device mark

051

Issue 2 - July 2007 1 www.zetex.com

© Zetex Semiconductors plc 2007

C

B

FCX1051A

Absolute maximum ratings

Parameter Symbol Value Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Peak pulse current

(a)

Continuous collector current I

Power dissipation at T

= 25°C P

amb

Operating and storage temperature range T

NOTES:

(a) Measured under pulsed conditions. Pulse width=300

request for these devices. Refer to the handling instructions for soldering surface mount components.
(b) Recommended P
(c) Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring

40x40x0.6mm and using comparable measurement methods adopted by other suppliers.

calculated using FR4 measuring 15x15x0.6mm.

tot

␮s. Duty cycle ⱕ2%. Spice parameter data is available upon

CBO

CEO

EBO

I

CM

C

tot

j;Tstg

150 V

40 V

5V

10 A

3A

(b)

1

(c)

2

W

W

-55 to +150 °C

Typical characteristics

Issue 2 - July 2007 2 www.zetex.com

© Zetex Semiconductors plc 2007