Diodes FCX1051A User Manual

FCX1051A

C

E

B

SOT89 NPN medium power transistor

Summary

BV

I

V

R

P

Complimentary type - FCX1151A

CEO

C(cont)

CE(sat)

CE(sat)

= 2W

D

> 40V

= 3A

< 120mV @ 1A

= 57m⍀

Description

An NPN low voltage, high gain bipolar transistor offering very low
saturation voltage and excellent current handling in the SOT89
package.

Features

• Very low saturation voltage

•High gain

• Small outline package

Applications

• Motor drive

•Strobe flash

E

• MOSFET and IGBT gate driving

• DC -DC converters

C

Ordering information

Device Reel size

(inches)

FCX1051ATA 7 12 1,000

Tape width

(mm)

Quantity

per reel

Pinout - top view

Device mark

051

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© Zetex Semiconductors plc 2007

C

B

FCX1051A

Absolute maximum ratings

Parameter Symbol Value Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Peak pulse current

(a)

Continuous collector current I

Power dissipation at T

= 25°C P

amb

Operating and storage temperature range T

NOTES:

(a) Measured under pulsed conditions. Pulse width=300

request for these devices. Refer to the handling instructions for soldering surface mount components.
(b) Recommended P
(c) Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring

40x40x0.6mm and using comparable measurement methods adopted by other suppliers.

calculated using FR4 measuring 15x15x0.6mm.

tot

␮s. Duty cycle ⱕ2%. Spice parameter data is available upon

CBO

CEO

EBO

I

CM

C

tot

j;Tstg

150 V

40 V

5V

10 A

3A

(b)

1

(c)

2

W

W

-55 to +150 °C

Typical characteristics

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FCX1051A

NOTES:

Electrical characteristics (@ T

= 25°C unless otherwise stated)

amb

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base

V

(BR)CBO

150 V IC = 100µA

breakdown voltage

Collector-emitter

V

150 V IC = 100µA

CES

breakdown voltage

Collector-emitter

V

40 V IC = 10mA

CEO

breakdown voltage

Collector-emitter

V

150 V IC =100µA, V

CEV

breakdown voltage

Emitter-base

V

(BR)EBO

5 V IE = 100µA

breakdown voltage

Collector cut-off

I

CBO

0.3 10 nA VCB = 120V

current

Emitter cut-off current I

Collector emitter cut-

0.3 10 nA VEB = 4V

EBO

I

CES

0.3 10 nA V

CES

= 120V

off current

Collector-emitter
saturation voltage

Base-emitter saturation
voltage

Base-emitter turn-on
voltage

Static forward current
transfer ratio

Transition frequency f

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

17 25 mV

85 120 mV

140 180 mV

170 250 mV

250 340 mV

880 1000 mV

840 950 mV

290 440 1200

270 450

270 360

130 220

40 55

155 MHz IC = 50mA, VCE = 10V

= 0.2A, IB = 10mA

I

C

= 1A, IB = 10mA

I

C

= 2A, IB = 20mA

I

C

= 3A, IB = 40mA

I

C

= 5A, IB = 100mA

I

C

= 3A, IB = 40mA

I

C

= 3A, VCE = 2V

I

C

= 10mA, VCE = 2V

I

C

= 1A, VCE = 2V

I

C

= 3A, VCE = 2V

I

C

= 5A, VCE = 2V

I

C

= 10A, VCE = 2V

I

C

f = 100MHz

Output capacitance C

Switching times t

obo

220 ns IC = 3A, IB = 30mA, VCC = 10V

on

t

off

27 40 pF VCB = 10V, f = 1MHz

540 ns IC = 3A, IB = 30mA, VCC = 10V

EB

= 1V

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*) Measured under pulsed conditions. Pulse width=300␮s. Duty cycle ⱕ2%.

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© Zetex Semiconductors plc 2007

Typical characteristics

FCX1051A

0.5

+25°C

0.4

0.3

- (V)

0.2

CE(sat)

V

0.1

0

1m

750

VCE=2V

600

+100°C

450

+25°C

300

- Typical gain

FE

h

150

-55°C

IC/IB=50

IC/IB=100

IC/IB=200

10m 100m 1 10

IC- Collector Current (A)

V

CE(sat)

v I

C

0.5

0.4

0.3

- (V)

0.2

CE(sat)

V

0.1

1.6

1.2

- (V)

0.8

BE(sat)

V

0.4

IC/IB=100

-55°C

+25°C
+100°C
+150°C

0

1m

10m 100m 1 10

IC- Collector Current (A)

IC/IB=100

V

-55°C

+25°C
+100°C
+150°C

CE(sat)

v I

C

1.0

0.8

0.6

- (V)

0.4

BE(on)

V

0.2

0

1m

10m 100m 1 10

IC - Collector Current (A)

hFEv I

0

1m

10m 100m 1 10

C

-55°C

+25°C
+100°C
+150°C

0

1m

10m 100m 1 10

IC - Collector Current (A)

V

BE(sat)

v I

C

IC- Collector Current (A)

V

BE(on)

v I

C

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© Zetex Semiconductors plc 2007

FCX1051A

D1

D

A

C

B1

L

E

H

E1

B

e

e1

Package outline - SOT89

DIM Millimeters Inches DIM Millimeters Inches

Min Max Min Max Min Max Min Max

A 1.40 1.60 0.550 0.630 E 2.29 2.60 0.090 0.102

B 0.44 0.56 0.017 0.022 E1 2.13 2.29 0.084 0.090

B1 0.36 0.48 0.014 0.019 e 1.50 BSC 0.059 BSC

C 0.35 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC

D 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167

D1 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Issue 2 - July 2007 5 www.zetex.com

© Zetex Semiconductors plc 2007

FCX1051A

Definitions
Product change

Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.

Applications disclaimer

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.

Life support

Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body

or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or to affect its safety or effectiveness.

Reproduction

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.

Terms and Conditions

All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.

Quality of product

Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.

Green compliance

Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg­ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.

Product status key:

“Preview” Future device intended for production at some point. Samples may be available
“Active” Product status recommended for new designs
“Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
“Obsolete” Production has been discontinued

Datasheet status key:

“Draft version” This term denotes a very early datasheet version and contains highly provisional information, which

“Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.

“Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to

Zetex sales offices

Europe

Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Telefon: [phone]
Fax: [phone]
[e-mail]

© 2007 Published by Zetex Semiconductors plc

Device is still in production to support existing designs and production

may change in any manner without notice.

However, changes to the test conditions and specifications may occur, at any time and without notice.

specifications may occur, at any time and without notice.

Americas

Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA

Telephone: [phone]
Fax: [phone]
[e-mail]

Asia Pacific

Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong

Telephone: [phone]
Fax: [phone]
[e-mail]

Corporate Headquarters

Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom

Telephone: [phone]
Fax: [phone]
[e-mail]

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