Diodes FCX1047A User Manual
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 2 - DECEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 20A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 25mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
Complimentary Type - FCX1147A
Partmarking Detail - 047
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current ** I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
† recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
Characteristics up to 20 Amps
FE
40mΩ at 4A
CBO
CEO
EBO
CM
C
=25°C P
amb
calculated using FR4 measuring 15x15x0.6mm
tot
tot
j:Tstg
FCX1047A
C
C
B
35 V
10 V
5V
20 A
4A
1 †
2 ‡
-55 to +150 °C
W
W
E
FCX1047A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
35 V
35 V
=100µA
I
C
=100µA
I
C
10 V IC=10mA
35 V
5V
=100µA, V
I
C
I
=100µA
E
0.3 10 nA VCB=20V
0.3 10 nA VEB=4V
0.3 10 nA V
25
50
140
160
220
40
70
200
240
350
mV
mV
mV
mV
mV
=20V
CES
IC=0.5A, IB=10mA*
I
=1A, IB=10mA*
C
I
=3A, IB=15mA*
C
I
=4A, IB=50mA*
C
I
=5A, IB=25mA*
C
920 1000 mV IC=4A, IB=50mA*
860 950 mV IC=4A, VCE=2V*
280
290
300
200
200
60
430
440
450
350
330
110
1200
IC=10mA, VCE=2V*
I
=0.5A, VCE=2V*
C
I
=1A, VCE=2V*
C
I
=4A, VCE=2V*
C
I
=5A, VCE=2V*
C
I
=20A, VCE=2V*
C
150 MHz IC=50mA, VCE=10V
f=50MHz
85 pF VCB=10V, f=1MHz
130 ns IC=4A, IB=40mA, VCC=10V
230 ns
I
=4A, I
C
V
CC
=10V
=±40mA,
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
=1V
EB
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